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Número de pieza | STW88N65M5-4 | |
Descripción | N-CHANNEL MOSFET | |
Fabricantes | STMicroelectronics | |
Logotipo | ||
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No Preview Available ! STW88N65M5-4
N-channel 650 V, 0.024 Ω typ., 84 A, MDmesh™ M5
Power MOSFET in a TO247-4 package
Datasheet — production data
TO247-4
2 34
1
Features
Order code
STW88N65M5-4
VDS
@Tjmax.
710 V
RDS(on) max.
0.029 Ω
ID
84 A
• Higher VDS rating
• Higher dv/dt capability
• Excellent switching performance thanks to the
extra driving source pin
• Easy to drive
• 100% avalanche tested
Figure 1. Internal schematic diagram
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Applications
• High efficiency switching applications:
– Servers
– PV inverters
– Telecom infrastructure
– Multi kW battery chargers
Description
This device is an N-channel Power MOSFET
based on MDmesh™ M5 innovative vertical
process technology combined with the well-
known PowerMESH™ horizontal layout. The
resulting product offers extremely low on-
resistance, making it particularly suitable for
applications requiring high power and superior
efficiency.
Order code
STW88N65M5-4
Table 1. Device summary
Marking
Package
88N65M5
TO247-4
October 2015
This is information on a product in full production.
Doc ID 027754 Rev 1
Packing
Tube
1/13
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1 page STW88N65M5-4
Electrical characteristics
Symbol
Parameter
td(V)
tr(V)
tf(i)
tc(off)
Voltage delay time
Voltage rise time
Current fall time
Crossing time
Table 6. Switching times
Test conditions
VDD = 400 V, ID = 56 A
RG = 7.2 Ω VGS = 10 V
(see Figure 17 and 20)
Min. Typ. Max. Unit
- 150 -
- 19 -
ns
- 24 -
- 45 -
Table 7. Source-drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
ISDM(1)
VSD (2)
trr
Qrr
IRRM
trr
Qrr
IRRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 84 A, VGS = 0
ISD = 84 A,
di/dt = 100 A/µs
VDD = 100 V (see Figure 17)
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 84 A,
di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 17)
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
-
-
-
-
-
-
-
-
-
84 A
336 A
1.5 V
544 ns
14 µC
50 A
660 ns
20 µC
60 A
Doc ID 027754 Rev 1
5/13
13
5 Page STW88N65M5-4
Dim.
A
A1
A2
b
b1
b2
c
c1
D
D1
D2
D3
E
E1
E2
E3
e
e1
L
P
P1
P2
Q
S
T
U
Package information
Table 8. TO247-4 package mechanical data
mm
Min.
4.90
2.31
1.90
1.16
1.15
0
0.59
0.58
20.90
16.25
1.05
24.97
15.70
13.10
4.90
2.40
2.44
4.98
19.80
3.50
Typ.
5.00
2.41
2.00
1.20
0.60
21.00
16.55
1.20
25.12
15.80
13.30
5.00
2.50
2.54
5.08
19.92
3.60
2.40 2.50
5.60
6.15
9.80
6.00
Max.
5.10
2.51
2.10
1.29
1.25
0.20
0.66
0.62
21.10
16.85
1.35
25.27
15.90
13.50
5.10
2.60
2.64
5.18
20.10
3.70
7.40
2.60
6.00
10.20
6.40
Doc ID 027754 Rev 1
11/13
13
11 Page |
Páginas | Total 13 Páginas | |
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