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Número de pieza | STW62NM60N | |
Descripción | N-CHANNEL MOSFET | |
Fabricantes | STMicroelectronics | |
Logotipo | ||
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Features
N-channel 600 V, 0.04 Ω typ., 65 A, MDmesh™ II
Power MOSFET in a TO-247 package
Datasheet − production data
Order code
STW62NM60N
VDS
600 V
RDS(on)
max
0.049 Ω
ID
65 A
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Applications
■ Switching applications
Description
This device is an N-channel Power MOSFET
developed using the second generation of
MDmesh™ technology. This revolutionary Power
MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
efficiency converters.
3
2
1
TO-247
Figure 1. Internal schematic diagram
$
'
Table 1. Device summary
Order code
STW62NM60N
Marking
62NM60N
3
!-V
Package
TO-247
Packaging
Tube
December 2012
This is information on a product in full production.
Doc ID 018945 Rev 3
1/13
www.st.com
13
1 page STW62NM60N
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 65 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 65 A, di/dt = 100 A/µs
VDD = 100 V
(see Figure 15)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 65 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 15)
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
-
-
-
-
65
260
1.6
470
10
45
570
15
50
A
A
V
ns
µC
A
ns
µC
A
Doc ID 018945 Rev 3
5/13
5 Page STW62NM60N
Figure 19. TO-247 drawing
Package mechanical data
0075325_G
Doc ID 018945 Rev 3
11/13
11 Page |
Páginas | Total 13 Páginas | |
PDF Descargar | [ Datasheet STW62NM60N.PDF ] |
Número de pieza | Descripción | Fabricantes |
STW62NM60N | N-CHANNEL MOSFET | STMicroelectronics |
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