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PDF STW45N60DM2AG Data sheet ( Hoja de datos )
| Número de pieza | STW45N60DM2AG | |
| Descripción | N-CHANNEL MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STW45N60DM2AG
Automotive-grade N-channel 600 V, 0.085 Ω typ., 34 A
MDmesh™ DM2 Power MOSFET in a TO-247 package
Datasheet - production data
Features
Order code
STW45N60DM2AG
VDS @
TJmax.
650 V
RDS(on)
max.
0.093 Ω
ID
34
A
PTOT
250
W
3
2
1
TO-247
Figure 1: Internal schematic diagram
• Designed for automotive applications and
AEC-Q101 qualified
• Fast-recovery body diode
• Extremely low gate charge and input
capacitance
• Low on-resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected
Applications
• Switching applications
Order code
STW45N60DM2AG
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Qrr)
and time (trr) combined with low RDS(on), rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
Table 1: Device summary
Marking
45N60DM2
Package
TO-247
Packing
Tube
July 2015
DocID028062 Rev 1
This is information on a product in full production.
1/12
www.st.com
1 page  
STW45N60DM2AG
Symbol
Parameter
Table 8: Source-drain diode
Test conditions
ISD
ISDM(1)
VSD(2)
trr
Qrr
IRRM
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery
charge
Reverse recovery
current
VGS = 0 V, ISD = 34 A
ISD = 34 A,
di/dt = 100 A/µs,
VDD = 60 V (see Figure 16:
"Test circuit for inductive
load switching and diode
recovery times")
trr Reverse recovery time ISD = 34 A,
Qrr
Reverse recovery
charge
di/dt = 100 A/µs,
VDD = 60 V, Tj = 150 °C
(see Figure 16: "Test
IRRM
Reverse recovery
current
circuit for inductive load
switching and diode
recovery times")
Electrical characteristics
Min.
-
-
-
-
-
Typ.
120
0.6
Max. Unit
34 A
136 A
1.6 V
ns
µC
- 10.4
- 240
- 2.4
A
ns
µC
- 20.5
A
Notes:
(1) Pulse width is limited by safe operating area.
(2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
DocID028062 Rev 1
5/12
5 Page 
STW45N60DM2AG
Revision history
5 Revision history
Date
03-Jul-2015
Table 10: Document revision history
Revision
Changes
1 Initial release.
DocID028062 Rev 1
11/12
11 Page | ||
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