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PDF STP3NK50Z Data sheet ( Hoja de datos )
| Número de pieza | STP3NK50Z | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STP3NK50Z
N-channel 500 V, 2.8 Ω typ., 2.3 A Zener-protected SuperMESH™
Power MOSFET in a TO-220 package
Datasheet - production data
Features
TAB
3
2
1
TO-220
Order code
STP3NK50Z
VDS RDS(on)max. ID
500 V 3.3 Ω 2.3 A
• Extremely high dv/dt capability
• ESD improved capability
• 100% avalanche tested
• Gate charge minimized
• Zener-protected
PTOT
45 W
Figure 1. Internal schematic diagram
D(2, TAB)
G(1)
S(3)
AM01476v1
Applications
• Switching applications
Description
This device is an N-channel Zener-protected
Power MOSFET developed using
STMicroelectronics' SuperMESH™ technology,
achieved through optimization of ST's well
established strip-based PowerMESH™ layout. In
addition to a significant reduction in on-
resistance, this device is designed to ensure a
high level of dv/dt capability for the most
demanding applications.
Order code
STP3NK50Z
Table 1. Device summary
Marking
Packages
P3NK50Z
TO-220
Packaging
Tube
August 2013
This is information on a product in full production.
DocID025103 Rev 1
1/14
www.st.com
1 page  
STP3NK50Z
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM(1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD= 2.3 A, VGS=0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 2.3 A, VDD= 40 V
di/dt = 100 A/µs,
(see Figure 17)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 12 A,VDD= 40 V
di/dt=100 A/µs,
Tj=150 °C
(see Figure 17)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
2. Pulse width limited by safe operating area
Min. Typ. Max. Unit
- 2.3 A
- 9.2 A
- 1.6 V
- 250
ns
- 745
nC
-6
A
- 300
ns
- 960
nC
- 6.2
A
Table 8. Gate-source Zener diode
Symbol
Parameter
Test conditions
Min Typ. Max. Unit
V(BR)GSO Gate-source breakdown voltage IGS = ± 1mA, ID=0
30 - - V
The built-in back-to-back Zener diodes have been specifically designed to enhance not only
the device’s ESD capability, but also to make them capable of safely absorbing any voltage
transients that may occasionally be applied from gate to source. In this respect, the Zener
voltage is appropriate to achieve efficient and cost-effective protection of device integrity.
The integrated Zener diodes thus eliminate the need for external components.
DocID025103 Rev 1
5/14
14
5 Page 
STP3NK50Z
Dim.
A
b
b1
c
D
D1
E
e
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
Package mechanical data
Table 9. TO-220 type A mechanical data
mm
Min.
4.40
0.61
1.14
0.48
15.25
10
2.40
4.95
1.23
6.20
2.40
13
3.50
3.75
2.65
Typ.
1.27
16.40
28.90
Max.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
3.85
2.95
DocID025103 Rev 1
11/14
14
11 Page | ||
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