|
|
PDF STL8DN6LF6AG Data sheet ( Hoja de datos )
| Número de pieza | STL8DN6LF6AG | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de STL8DN6LF6AG (archivo pdf) en la parte inferior de esta página. Total 16 Páginas | ||
|
No Preview Available !
STL8DN6LF6AG
Automotive-grade dual N-channel 60 V, 21 mΩ typ., 32 A
STripFET™ F6 Power MOSFET in a PowerFLAT™ 5x6 DI package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
VDS RDS(on) max. ID
PTOT
STL8DN6LF6AG 60 V
27 mΩ
32 A 55 W
Designed for automotive applications and
AEC-Q101 qualified
Very low on-resistance
Very low gate charge
High avalanche ruggedness
Low gate drive power loss
Wettable flank package
Applications
Switching applications
Description
This device is a dual N-channel Power MOSFET
developed using the STripFET™ F6 technology
with a new trench gate structure. The resulting
Power MOSFET exhibits very low RDS(on) in all
packages.
Order code
STL8DN6LF6AG
Marking
8DN6LF6
Table 1: Device summary
Package
PowerFLAT™ 5x6 double island
Packing
Tape and reel
January 2016
DocID028014 Rev 3
This is information on a product in full production.
1/16
www.st.com
1 page  
STL8DN6LF6AG
Symbol Parameter
ISD
Source-drain
current
ISDM(1)
Source-drain
current
(pulsed)
VSD(2)
Forward on
voltage
trr
Reverse
recovery time
Reverse
Qrr recovery
charge
Reverse
IRRM recovery
current
Table 8: Source-drain diode
Test conditions
Electrical characteristics
Min. Typ. Max. Unit
- 9.6 A
- 38 A
VGS = 0 V, ISD = 9.6 A
ISD = 25 A, di/dt = 100 A/µs, VDD = 48 V,
Tj = 25 °C (see Figure 15: "Test circuit for
inductive load switching and diode
recovery times")
- 1.3 V
- 22.5
ns
- 22.2
nC
- 2.0
A
Notes:
(1) Pulse width is limited by safe operating area.
(2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
DocID028014 Rev 3
5/16
5 Page 
STL8DN6LF6AG
Package information
Table 9: PowerFLAT™ 5x6 double island WF type R mechanical data
Dim.
Min.
mm
Typ.
Max.
A 0.80
1.00
A1 0.02
0.05
A2 0.25
b 0.30
0.50
C 5.80 6.00 6.20
D 5.00 5.20 5.40
D2 1.68
1.88
D3 4.80 5.00 5.20
D4 4.05 4.20 4.35
D5 0.25 0.40 0.55
D6 0.15 0.30 0.45
e 1.27
E 6.20 6.40 6.60
E2 3.50
3.70
E3
0.20
0.325
0.45
E4 0.55
0.75
E5 0.08
0.28
E6 2.35
2.55
E7 0.40
0.60
E8 0.85 1.00 1.15
K 1.275
1.575
L 0.70
0.90
L1 0.275
θ 0°
12°
DocID028014 Rev 3
11/16
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet STL8DN6LF6AG.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| STL8DN6LF6AG | N-channel Power MOSFET | STMicroelectronics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |