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PDF STL25N60M2-EP Data sheet ( Hoja de datos )
| Número de pieza | STL25N60M2-EP | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STL25N60M2-EP
N-channel 600 V, 0.184 Ω typ., 16 A MDmesh™ M2 EP
Power MOSFET in a PowerFLAT™ 8x8 HV package
Datasheet - production data
Features
Order code
VDS @ TJmax RDS(on) max. ID
5
STL25N60M2-EP
650 V
0.206 Ω 16 A
4
32
1
PowerFLAT™ 8x8 HV
Figure 1: Internal schematic diagram
Extremely low gate charge
Excellent output capacitance (COSS) profile
Very low turn-off switching losses
100% avalanche tested
Zener-protected
Applications
Switching applications
Tailored for Very High Frequency
Converters (f > 150 kHz)
Order code
STL25N60M2-EP
Description
This device is an N-channel Power MOSFET
developed using MDmesh™ M2 EP enhanced
performance technology. Thanks to its strip
layout and an improved vertical structure, the
device exhibits low on-resistance, optimized
switching characteristics with very low turn-off
switching losses, rendering it suitable for the
most demanding very high frequency converters.
Table 1: Device summary
Marking
Package
25N60M2EP
PowerFLAT™ 8x8 HV
Packaging
Tape and reel
November 2015
DocID027254 Rev 3
This is information on a product in full production.
1/16
www.st.com
1 page  
STL25N60M2-EP
Symbol
Parameter
td(on)
tr
td(off)
Turn-on delay time
Rise time
Turn-off-delay time
tf Fall time
Table 8: Switching times
Electrical characteristics
Test conditions
Min. Typ. Max. Unit
VDD = 300 V, ID = 9 A
RG = 4.7 Ω, VGS = 10 V
(see Figure 15: "Switching
- 15 - ns
- 10 - ns
times test circuit for resistive - 61 - ns
load" and Figure 20:
"Switching time waveform")
- 16 - ns
Symbol
ISD(1)
ISDM(1),(2)
VSD (3)
trr
Qrr
IRRM
trr
Qrr
IRRM
Parameter
Table 9: Source drain diode
Test conditions
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VGS = 0 V, ISD = 16 A
ISD = 18 A, di/dt = 100 A/µs,
VDD = 100 V (see Figure 17: "
Test circuit for inductive load
switching and diode recovery
times")
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 18 A, di/dt = 100 A/µs,
VDD = 100 V, Tj = 150 °C
(see Figure 17: " Test circuit
for inductive load switching
and diode recovery times")
Min.
-
-
-
-
-
-
-
-
-
Typ.
360
5
28
445
6.5
29
Max.
16
64
1.6
Unit
A
A
V
ns
µC
A
ns
µC
A
Notes:
(1)The value is limited by package.
(2)Pulse width is limited by safe operating area
(3)Pulsed: pulse duration = 300 µs, duty cycle 1.5%
DocID027254 Rev 3
5/16
5 Page 
STL25N60M2-EP
Package mechanical data
4.1 PowerFLAT 8x8 HV package information
Figure 21: PowerFLAT™ 8x8 HV package outline
DocID027254 Rev 3
8222871_Rev_3_ A
11/16
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet STL25N60M2-EP.PDF ] | |
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