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PDF STL19N65M5 Data sheet ( Hoja de datos )
| Número de pieza | STL19N65M5 | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STL19N65M5
N-channel 650 V, 0.215 Ω typ., 12.5 A MDmesh™ V
Power MOSFET in a PowerFLAT™ 8x8 HV package
Datasheet - production data
Features
6
6
6
*
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Figure 1. Internal schematic diagram
'
*
6
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Order code
STL19N65M5
VDS
710 V
RDS(on)max.
0.240 Ω
ID
(1)
12.5 A
1. The value is rated according to Rthj-case and limited by
package.
• Worldwide best RDS(on) * area
• Higher VDSS rating and high dv/dt capability
• Excellent switching performance
Applications
• Switching applications
Description
This device is an N-channel MDmesh™ V Power
MOSFET based on an innovative proprietary
vertical process technology, which is combined
with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Order code
STL19N65M5
Table 1. Device summary
Marking
Package
19N65M5
PowerFLAT™ 8x8 HV
Packaging
Tape and reel
July 2013
This is information on a product in full production.
DocID024984 Rev 1
1/17
www.st.com
1 page  
STL19N65M5
Electrical characteristics
Symbol
Table 6. Switching times
Parameter
Test conditions
td(v)
tr(v)
tf(i)
tc(off)
Voltage delay time
Voltage rise time
Current fall time
Crossing time
VDD = 400 V, ID = 9.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 17 and 20)
Min. Typ. Max. Unit
- 36 - ns
- 7 - ns
- 9 - ns
- 11 - ns
Symbol
Table 7. Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
(1)
ISD Source-drain current
(1),(2)
ISDM
Source-drain current (pulsed)
(3)
VSD Forward on voltage
ISD = 15 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 15 A, di/dt = 100 A/μs
VDD = 100 V (see Figure 17)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 15 A, di/dt = 100 A/μs
VDD = 100 V, Tj = 150 °C
(see Figure 17)
1. The value is rated according to Rthj-case and limited by package.
2. Pulse width limited by safe operating area
3. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
-
-
-
-
-
-
-
-
-
12.5 A
50 A
1.5 V
290 ns
3.4 μC
23.5 A
352 ns
4 μC
24 A
DocID024984 Rev 1
5/17
17
5 Page 
STL19N65M5
Dim.
A
A1
b
D
E
D2
E2
e
L
Package mechanical data
Table 8. PowerFLAT™ 8x8 HV mechanical data
mm
Min.
Typ.
0.80 0.90
0.00 0.02
0.95 1.00
8.00
8.00
7.05 7.20
4.15 4.30
2.00
0.40 0.50
Max.
1.00
0.05
1.05
7.30
4.40
0.60
DocID024984 Rev 1
11/17
17
11 Page | ||
| Páginas | Total 17 Páginas | |
| PDF Descargar | [ Datasheet STL19N65M5.PDF ] | |
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