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PDF CR10CY Data sheet ( Hoja de datos )
| Número de pieza | CR10CY | |
| Descripción | MEDIUM POWER/ INVERTER USE NON-INSULATED TYPE/ GLASS PASSIVATION TYPE | |
| Fabricantes | Mitsubishi Electric Semiconductor | |
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Hay una vista previa y un enlace de descarga de CR10CY (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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CR10CY
MITSUBISHI SEMICONDUCTOR 〈HIGH-SPEED SWITCHING THYRISTOR〉
CR10CY
MEDIUM POWER, INVERTER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
OUTLINE DRAWING
3
Dimensions
in mm
2
1
(16.2)
φ2.0 MIN
φ8.7 MAX
• IT (AV) ......................................................................... 10A
• VDRM ..............................................................400V/600V
• IGT ..........................................................................40mA
M6×1
MICA WASHER
φ32×φ6×t0.25
SPACER
φ9×φ6.2×t1
SOLDERLESS TERMINAL
TELEGRAPH WIRE
1.04~2.63mm2
LOCK WASHER M6
BRASS NUT M6×1
1
3
2
1 CATHODE
2 ANODE
3 GATE
Note: Mica washer and spacer are
provided only upon request.
APPLICATION
Inverter, DC choppers, DC static switches, pulse generator
MAXIMUM RATINGS
Symbol
Parameter
VRRM
VRSM
VDRM
VDSM
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
Voltage class
8
400
500
400
500
12
600
720
600
720
Unit
V
V
V
V
Symbol
IT (RMS)
IT (AV)
ITSM
I2t
di/dt
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I2t for fusing
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Conditions
Commercial frequency, sine half wave, 180°C conduction, Tc=66°C
60Hz sine half wave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
VD=1/2VDRM, ITM=30A, IG=0.1A, Tc=25°C, f=60Hz
— Mounting torque
— Weight
Typical value
Ratings
15.5
10
200
165
100
5.0
0.5
10
5
2
–30 ~ +125
–30 ~ +125
30
2.94
8.8
Unit
A
A
A
A2s
A/µs
W
W
V
V
A
°C
°C
kg·cm
N·m
g
Feb.1999
1 page  
MITSUBISHI SEMICONDUCTOR 〈HIGH-SPEED SWITCHING THYRISTOR〉
CR10CY
MEDIUM POWER, INVERTER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
TURN-OFF TIME VS.
ON-STATE CURRENT
160
140
120
TYPICAL EXAMPLE
100
80
60
Tj = 125°C
40 tw = 100µs
di/dt = –8A/µs
20 VR = 50V, VD = 1/2VDRM
dv/dt = 20V/µs
0
0 2 4 6 8 10 12 14 16
ON-STATE CURRENT (A)
Feb.1999
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet CR10CY.PDF ] | |
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