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PDF MTE130N20E3 Data sheet ( Hoja de datos )

Número de pieza MTE130N20E3
Descripción N-Channel Enhancement Mode Power MOSFET
Fabricantes CYStech 
Logotipo CYStech Logotipo



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No Preview Available ! MTE130N20E3 Hoja de datos, Descripción, Manual

CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTE130N20E3
Spec. No. : C966E3
Issued Date : 2015.05.06
Revised Date :
Page No. : 1/ 8
Features
Simple Drive Requirement
Low Gate Charge
Fast Switching Characteristic
RoHS compliant package
BVDSS
ID @ VGS=10V, TC=25°C
RDS(ON)@VGS=10V, ID=9A
200V
18A
159 mΩ(typ)
Symbol
MTE130N20E3
Outline
TO-220
GGate DDrain SSource
GDS
Ordering Information
Device
MTE130N20E3-0-UB-X
Package
TO-220
(RoHS compliant package)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTE130N20E3
CYStek Product Specification

1 page




MTE130N20E3 pdf
CYStech Electronics Corp.
Spec. No. : C966E3
Issued Date : 2015.05.06
Revised Date :
Page No. : 5/ 8
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
1000
Ciss
C oss
100
10
0.1
Crss
1 10
VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drain Current
100
10
Threshold Voltage vs Junction Tempearture
1.4
1.2
ID=1mA
1
0.8
0.6 ID=250μA
0.4
0.2
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=100V
8 VDS=40V
1
0.1
0.01
0.001
VDS=10V
Ta=25°C
Pulsed
0.01 0.1 1 10
ID, Drain Current(A)
100
6
VDS=160V
4
2
ID=18A
0
0 4 8 12 16 20 24
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
100
RDSON
Limited
10
10μs
100μs
1
0.1 TC=25°C, Tj=175°C
VGS=10V, RθJC=2.1°C/W
Single Pulse
1ms
10ms
DC
0.01
0.1
1 10 100
VDS, Drain-Source Voltage(V)
1000
Maximum Drain Current vs Case Temperature
25
20
15
10
5
VGS=10V, RθJC=2.1°C/W
0
25 50 75 100 125 150
TC, Case Temperature(°C)
175
MTE130N20E3
CYStek Product Specification

5 Page










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