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PDF MTB4D0N03BQ8 Data sheet ( Hoja de datos )
| Número de pieza | MTB4D0N03BQ8 | |
| Descripción | N-Channel Enhancement Mode Power MOSFET | |
| Fabricantes | CYStech | |
| Logotipo |  |
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CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTB4D0N03BQ8
Spec. No. : C092Q8
Issued Date : 2015.10.05
Revised Date :
Page No. : 1/9
BVDSS
ID @ TA=25°C, VGS=10V
ID @ TC=25°C, VGS=10V
RDS(ON)@VGS=10V, ID=18A
RDS(ON)@VGS=4.5V, ID=10A
30V
17.5A
22.0A
4.2 mΩ(typ)
6.0mΩ(typ)
Description
The MTB4D0N03BQ8 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications
and suited for low voltage applications such as DC/DC converters.
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Repetitive Avalanche Rated
• Pb-free & Halogen-free package
Symbol
MTB4D0N03BQ8
Outline
Pin 1
SOP-8
G：Gate
D：Drain
S：Source
MTB4D0N03BQ8
CYStek Product Specification
1 page  
CYStech Electronics Corp.
Spec. No. : C092Q8
Issued Date : 2015.10.05
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Threshold Voltage vs Junction Tempearture
1.4
1000
Ciss
C oss
f=1MHz
Crss
100
0.1 1 10
VDS, Drain-Source Voltage(V)
100
Forward Transfer Admittance vs Drain Current
100
VDS=10V
10
1 VDS=15V
0.1
0.01
0.001
Pulsed
Ta=25°C
0.01 0.1
1
10
ID, Drain Current(A)
100
1.2
ID=1mA
1.0
0.8
0.6
ID=250μA
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
8 VDS=15V
VDS=10V
6
4
VDS=24V
2
ID=16A
0
0 5 10 15 20 25 30 35 40
Qg, Total Gate Charge(nC)
Maximum Safe Operating Area
100
RDS(ON)
Limit
10
1
0.1 TA=25°C, Tj=150°C
VGS=10V,RθJA=40°C/W
Single Pulse
0.01
0.01
0.1 1 10
VDS, Drain-Source Voltage(V)
100μs
1ms
10ms
100ms
1s
DC
100
Maximum Drain Current vs Junction Temperature
20
16
12
8
4
TA=25°C,RθJA=40°C/W,VGS=10V
0
25 50 75 100 125 150
Tj, Junction Temperature(°C)
175
MTB4D0N03BQ8
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet MTB4D0N03BQ8.PDF ] | |
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