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PDF MBR3035CT Data sheet ( Hoja de datos )

Número de pieza MBR3035CT
Descripción Dual Schottky Barrier Rectifiers
Fabricantes Silicon Standard 
Logotipo Silicon Standard Logotipo



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No Preview Available ! MBR3035CT Hoja de datos, Descripción, Manual

FEATURES
„ Reverse voltage 35 to 45 V
„ Forward current 3.0 A
„ Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
„ Dual rectifier construction, positive center tap
„ Metal silicon junction, majority carrier
conduction
„ Low power loss, high efficiency
„ Guard ring for over voltage protection
„ For use in low voltage, high frequency
inverters, free wheeling, and polarity protection
applications
MECHANICAL DATA
„ Case: JEDEC TO-220AB, ITO-220AB, TO-
263AB molded plastic body
„ Terminals: Plated leads, solder-able per MIL-
STD-750, Method 2026
„ High temperature soldering guaranteed:
250oC/10 seconds, 0.25" (6.35mm) from case
(TO-220AB, ITO-220AB) at terminals (TO-
236AB)
„ Polarity: As marked Mounting Position: Any
„ Mounting Torque: 10 in-lbs maximum
„ Weight: 0.08 ounce, 2.24 grams
PACKAGE DIMENSIONS
TO-220AB
MBR3035(45)CT
MBRF3035(45)CT
MBRB3035(45)CT
Series
Dual Schottky Barrier Rectifiers
12/24/2006 Rev. 1.01
www.SiliconStandard.com
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MBR3035CT pdf
MBR3035(45)CT
MBRF3035(45)CT
MBRB3035(45)CT
Series
Disclaimer
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation
makes no guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such
information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of
third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any
products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license
is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any
information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties.
12/24/2006 Rev. 1.01
www.SiliconStandard.com
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