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Número de pieza | RU30P4C | |
Descripción | P-Channel Advanced Power MOSFET | |
Fabricantes | Ruichips | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RU30P4C (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! RU30P4C
P-Channel Advanced Power MOSFET
Features
• -25V/-4A,
RDS (ON) =45mΩ(Typ.)@VGS=-10V
RDS (ON) =55mΩ(Typ.)@VGS=-4.5V
RDS (ON) =75mΩ(Typ.)@VGS=-2.5V
• Low On-Resistance
• Super High Dense Cell Design
• Reliable and Rugged
• Lead Free and Green Devices Available (RoHS Compliant)
Applications
• Load Switch
•DC/DC Converter
Pin Description
D
G
S
SOT23-3
D
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
①
IDP
300μs Pulse Drain Current Tested
②
ID
Continuous Drain Current(VGS=-10V)
PD Maximum Power Dissipation
RθJC
RθJA③
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
④
EAS
Avalanche Energy, Single Pulsed
S
P-Channel MOSFET
Rating
Unit
TA=25°C
-25
±16
150
-55 to 150
-1.5
V
°C
°C
A
TA=25°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
-16 A
-4
A
-3.2
1.3
W
0.8
- °C/W
100 °C/W
- mJ
Ruichips Semiconductor Co., Ltd
Rev. A– FEB., 2013
1
www.ruichips.com
1 page ℃
RU30P4C
Typical Characteristics
Output Characteristics
30
-10V
25
20
-6V
-4.5V
15
-3V
10
5 -1V
0
01234
-VDS - Drain-Source Voltage (V)
5
Drain-Source On Resistance
2.5
VGS=-10V
ID=-4A
2.0
1.5
1.0
0.5
0.0
-50
TJ=25°C
Rds(on)=45mΩ
-25 0 25 50 75 100 125
TJ - Junction Temperature (°C)
150
Capacitance
1000
Frequency=1.0MHz
800
600 Ciss
400
200
Coss
Crss
0
1
10
100
-VDS - Drain-Source Voltage (V)
Ruichips Semiconductor Co., Ltd
Rev. A– FEB., 2013
5
250
225
200
175
150
125
100
75
50
25
0
0
10
Drain-Source On Resistance
-2.5V
-4.5V
-10V
2468
-ID - Drain Current (A)
10
Source-Drain Diode Forward
1 TJ=150°C
0.1 TJ=25°C
0.01
0.2 0.4 0.6 0.8 1 1.2 1.4
-VSD - Source-Drain Voltage (V)
Gate Charge
10
9 VDS=-24V
IDS=-4A
8
7
6
5
4
3
2
1
0
0
5 10
QG - Gate Charge (nC)
15
www.ruichips.com
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet RU30P4C.PDF ] |
Número de pieza | Descripción | Fabricantes |
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RU30P4C | P-Channel Advanced Power MOSFET | Ruichips |
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RU30P4H | P-Channel Advanced Power MOSFET | Ruichips |
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