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PDF RU30P3B Data sheet ( Hoja de datos )

Número de pieza RU30P3B
Descripción P-Channel Advanced Power MOSFET
Fabricantes Ruichips 
Logotipo Ruichips Logotipo



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RU30P3B
P-Channel Advanced Power MOSFET
Features
• -30V/-3.5A,
RDS (ON) =50mΩ(Typ.)@VGS=-10V
RDS (ON) =80mΩ(Typ.)@VGS=-4.5V
• Low On-Resistance
• Super High Dense Cell Design
• Reliable and Rugged
• Lead Free and Green Devices Available (RoHS Compliant)
Applications
• Load Switch
Pin Description
D
G
S
SOT23
D
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP
300μs Pulse Drain Current Tested
ID
Continuous Drain Current(VGS=-10V)
PD Maximum Power Dissipation
RθJC
RθJA
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
EAS
Avalanche Energy, Single Pulsed
S
P-Channel MOSFET
Rating
Unit
TA=25°C
-30
±20
150
-55 to 150
-1
V
°C
°C
A
TA=25°C
TA=25°C
TA=70°C
TA=25°C
TA=70°C
-14 A
-3.5
A
-2.8
1
W
0.64
- °C/W
125 °C/W
TBD
mJ
Ruichips Semiconductor Co., Ltd
Rev. A– APR., 2013
1
www.ruichips.com

1 page




RU30P3B pdf
RU30P3B
Typical Characteristics
Output Characteristics
15
-10V
-8V
12 -6V
-4.5V
9
6 -3V
3
-1V
0
01234
-VDS - Drain-Source Voltage (V)
5
Drain-Source On Resistance
2.5
VGS=-10V
ID=-3.5A
2.0
1.5
1.0
0.5
0.0
-50
TJ=25°C
Rds(on)=50mΩ
-25 0 25 50 75 100 125
TJ - Junction Temperature (°C)
150
Capacitance
1000
Frequency=1.0MHz
800
600 Ciss
400
200
Coss
Crss
0
1
10
100
-VDS - Drain-Source Voltage (V)
Ruichips Semiconductor Co., Ltd
Rev. A– APR., 2013
5
300
250
200
150
100
50
0
0
10
Drain-Source On Resistance
-4.5V
-10V
2468
-ID - Drain Current (A)
10
Source-Drain Diode Forward
1
TJ=150°C
0.1 TJ=25°C
0.01
0.2 0.4 0.6 0.8 1 1.2 1.4
-VSD - Source-Drain Voltage (V)
Gate Charge
10
9 VDS=-24V
IDS=-3.5A
8
7
6
5
4
3
2
1
0
0
5 10
QG - Gate Charge (nC)
15
www.ruichips.com

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