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PDF RU2H50Q Data sheet ( Hoja de datos )
| Número de pieza | RU2H50Q | |
| Descripción | N-Channel Advanced Power MOSFET | |
| Fabricantes | Ruichips | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de RU2H50Q (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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RU2H50Q
N-Channel Advanced Power MOSFET
MOSFET
Features
• 200V/60A,
RDS (ON) =34mΩ (Type) @ VGS=10V
• Low Gate Charge
• Fast Switching
• 100% avalanche tested
• 175°C Operating Temperature
• Lead Free,RoHS compliant
Pin Description
TO-247
Applications
• Switching Application
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP 300μs Pulse Drain Current Tested
ID Continuous Drain Current
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
③
EAS
Avalanche Energy, Single Pulsed
TC=25°C
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
Copyright© Ruichips Semiconductor Co., Ltd
Rev. C– FEB., 2012
Rating
200
±25
175
-55 to 175
60
①
230
②
60
②
45
326
163
0.46
Unit
V
°C
°C
A
A
A
W
°C/W
157 mJ
www.ruichips.com
1 page  
Typical Characteristics
Drain-Source On Resistance
RU2H50Q
Source-Drain Diode Forward
Tj - Junction Temperature (°C)
Capacitance
VSD - Source-Drain Voltage (V)
Gate Charge
VDS - Drain-Source Voltage (V)
Copyright© Ruichips Semiconductor Co., Ltd
Rev. C– FEB., 2012
5
QG - Gate Charge (nC)
www.ruichips.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet RU2H50Q.PDF ] | |
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