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Número de pieza | TSM70N380 | |
Descripción | N-Channel Power MOSFET / Transistor | |
Fabricantes | Taiwan Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de TSM70N380 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! TSM70N380
Taiwan Semiconductor
N-Channel Power MOSFET
700V, 11A, 0.38Ω
FEATURES
● Super-Junction technology
● High performance due to small figure-of-merit
● High ruggedness performance
● High commutation performance
APPLICATION
● Power Supply
● Lighting
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE
UNIT
VDS
RDS(on) (max)
Qg
700 V
0.38 Ω
18.8 nC
ITO-220
TO-251 (IPAK)
TO-252 (DPAK)
Notes: Moisture sensitivity level: level 3. Per J-STD-020
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL ITO-220
IPAK/DPAK
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 1)
Pulsed Drain Current (Note 2)
TC = 25°C
TC = 100°C
Total Power Dissipation @ TC = 25°C
Single Pulsed Avalanche Energy (Note 3)
Single Pulsed Avalanche Current (Note 3)
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
PDTOT
EAS
IAS
TJ, TSTG
700
±30
11
6.6
33
33 125
156
2.5
- 55 to +150
UNIT
V
V
A
A
W
mJ
A
°C
THERMAL PERFORMANCE
PARAMETER
SYMBOL ITO-220 IPAK/DPAK UNIT
Junction to Case Thermal Resistance
RӨJC
3.8
1 °C/W
Junction to Ambient Thermal Resistance
RӨJA
62 °C/W
Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined
at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board
design. RӨJA shown below for single device operation on FR-4 PCB in still air.
Document Number: DS_P0000137
1
Version: C15
1 page CHARACTERISTICS CURVES
(TC = 25°C unless otherwise noted)
Capacitance vs. Drain-Source Voltage
TSM70N380
Taiwan Semiconductor
BVDSS vs. Junction Temperature
Maximum Safe Operating Area (DPAK/IPAK)
Maximum Safe Operating Area (ITO-220)
101
100
10-1
10-2
10-3
10-4
10-7
Normalized Thermal Transient Impedance, Junction-to-Case (ITO-220)
Duty=0.5
Duty=0.2
Duty=0.1
Duty=0.05
Duty=0.02
Duty=0.01
Single pulse
10-6 10-5 10-4 10-3 10-2 10-1 100
Square Wave Pulse Duration (sec)
101
Document Number: DS_P0000137
5
Version: C15
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet TSM70N380.PDF ] |
Número de pieza | Descripción | Fabricantes |
TSM70N380 | N-Channel Power MOSFET / Transistor | Taiwan Semiconductor |
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