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PDF TSM150P03 Data sheet ( Hoja de datos )
| Número de pieza | TSM150P03 | |
| Descripción | P-Channel Power MOSFET | |
| Fabricantes | Taiwan Semiconductor | |
| Logotipo |  |
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TSM150P03
Taiwan Semiconductor
P-Channel Power MOSFET
-30V, -30A, 15mΩ
Features
● Fast Switching
● Suitable for 4.5V drive applications
● Pb-free plating
● RoHS compliant
● Halogen-free mold compound
Application
● Load Switch
● Networking
PDFN33
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE UNIT
VDS
RDS(on) (max)
VGS = -10V
VGS = -4.5V
Qg
-30
15
30
4.1
V
mΩ
nC
Notes: Moisture sensitivity level: level 3. Per J-STD-020
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS -30
Gate-Source Voltage
Continuous Drain Current (Note 1)
Pulsed Drain Current (Note 2)
TC = 25°C
TC = 100°C
VGS
ID
IDM
±20
-30
-19
-120
Total Power Dissipation @ TC = 25°C
PDTOT
23
Operating Junction and Storage Temperature Range
TJ, TSTG
- 55 to +150
UNIT
V
V
A
A
W
°C
THERMAL PERFORMANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Junction to Case Thermal Resistance
RӨJC
5.4 °C/W
Junction to Ambient Thermal Resistance
RӨJA
62 °C/W
Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined
at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board
design. RӨJA shown below for single device operation on FR-4 PCB in still air.
Document Number: DS_P0000165
1
Version: A15
1 page  
PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters)
PDFN33
TSM150P03
Taiwan Semiconductor
SUGGESTED PAD LAYOUT (Unit: Millimeters)
MARKING DIAGRAM
Y = Year Code
M = Month Code for Halogen Free Product
O =Jan P =Feb Q =Mar R =Apr
S =May T =Jun U =Jul V =Aug
W =Sep X =Oct Y =Nov Z =Dec
L = Lot Code (1~9, A~Z)
Document Number: DS_P0000165
5
Version: A15
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet TSM150P03.PDF ] | |
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