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PDF TSM120N10PQ56 Data sheet ( Hoja de datos )
| Número de pieza | TSM120N10PQ56 | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | Taiwan Semiconductor | |
| Logotipo |  |
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TSM120N10PQ56
100V N-Channel MOSFET
PDFN56
Pin Definition:
1. Source 8. Drain
2. Source 7. Drain
3. Source 6. Drain
4. Gate
5. Drain
Key Parameter Performance
Parameter
Value
Unit
VDS
RDS(on)(max)
100
12
V
mΩ
Qg 145 nC
Features
● Low On-Resistance
● Low Input Capacitance
● Low Gate Charge
Ordering Information
Part No.
Package
Packing
TSM120N10PQ56 RLG PDFN56 2.5kpcs / 13” Reel
Note: “G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Block Diagram
N-Channel MOSFET
Absolute Maximum Ratings (Tc=25oC unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 3)
Drain Current-Pulsed (Note 1)
Single Pulse Avalanche Energy, L=0.5mH
Maximum Power Dissipation (Note 2)
Storage Temperature Range
Operating Junction Temperature Range
TC=25°C
TA=25°C
TC=25°C
TA=25°C
VDS
VGS
ID
IDM
EAS
PD
TSTG
TJ
Thermal Performance
Parameter
Symbol
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
RӨJC
RӨJA
Limit
100
±20
58
16.1
150
156
36
2
-55 to +150
-55 to +150
Limit
1.2
62
Unit
V
V
A
A
mJ
W
°C
°C
Unit
oC/W
oC/W
1/6 Version: A14
1 page  
TSM120N10PQ56
100V N-Channel MOSFET
PDFN56 Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y = Year Code
M = Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L = Lot Code
5/6 Version: A14
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet TSM120N10PQ56.PDF ] | |
Hoja de datos destacado
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| TSM120N10PQ56 | N-Channel Power MOSFET / Transistor | Taiwan Semiconductor |
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