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PDF TSM080N03E Data sheet ( Hoja de datos )
| Número de pieza | TSM080N03E | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | Taiwan Semiconductor | |
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TSM080N03E
Taiwan Semiconductor
N-Channel Power MOSFET
30V, 55A, 8mΩ
FEATURES
● Fast switching
● 100% EAS Guaranteed
● Green Device Available
● G-S ESD Protection Diode Embedded
APPLICATION
● Vcore / MB
● POL Application
● SMPS 2nd SR
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE
UNIT
VDS
RDS(on) (max)
VGS = 10V
VGS = 4.5V
Qg
30
8
12.5
7.5
V
mΩ
nC
PDFN56
Notes: Moisture sensitivity level: level 3. Per J-STD-020
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 1)
Pulsed Drain Current (Note 2)
TC = 25°C
TC = 100°C
VDS
VGS
ID
IDM
30
±20
55
35
220
Total Power Dissipation @ TC = 25°C
Single Pulsed Avalanche Energy (Note 3)
Single Pulsed Avalanche Current (Note 3)
PDTOT
EAS
IAS
54
45
30
Operating Junction and Storage Temperature Range
TJ, TSTG
- 55 to +150
UNIT
V
V
A
A
W
mJ
A
°C
THERMAL PERFORMANCE
PARAMETER
SYMBOL
LIMIT
UNIT
Junction to Case Thermal Resistance
RӨJC
2.3 °C/W
Junction to Ambient Thermal Resistance
RӨJA
62 °C/W
Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined
at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board
design. RӨJA shown below for single device operation on FR-4 PCB in still air.
Document Number: DS_P0000014
1
Version: B15
1 page  
PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters)
PDFN56
TSM080N03E
Taiwan Semiconductor
SUGGESTED PAD LAYOUT (Unit: Millimeters)
MARKING DIAGRAM
Y = Year Code
M = Month Code for Halogen Free Product
O =Jan P =Feb Q =Mar R =Apr
S =May T =Jun U =Jul V =Aug
W =Sep X =Oct Y =Nov Z =Dec
L = Lot Code (1~9, A~Z)
Document Number: DS_P0000014
5
Version: B15
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet TSM080N03E.PDF ] | |
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