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PDF SMG2390N Data sheet ( Hoja de datos )
| Número de pieza | SMG2390N | |
| Descripción | N-Channel MosFET | |
| Fabricantes | SeCoS | |
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Elektronische Bauelemente
SMG2390N
N-Channel Enhancement Mode Mos.FET
1.1 A, 150 V, RDS(ON) 0.700
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a High Cell Density
trench process to provide Low RDS(on) and to ensure minimal power
loss and heat dissipation. Typical applications are DC-DC converters
and power management in portable and battery-powered products
such as computers, printers, PCMCIA cards, cellular and cordless
telephones.
FEATURES
Low RDS(on) provides higher efficiency and extends battery life.
Low thermal impedance copper leadframe SC-59 saves
board space.
Fast switching speed.
High performance trench technology.
PRODUCT SUMMARY
PRODUCT SUMMARY
VDS(V)
150
RDS(on) (
0.700@VGS= 10V
1.200@VGS= 5.5V
ID(A)
1.1
0.8
SC-59
A
L
3
Top View
CB
12
KE
1
D
F GH
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min.
2.70
2.25
1.30
Max.
3.10
3.00
1.70
1.00 1.40
1.70 2.30
0.35 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.10 REF.
0.40 REF.
0.10 0.20
0.45 0.55
0.85 1.15
ABSOLUTE MAXIMUM RATINGS(TA=25°C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a
Pulsed Drain Current b
Continuous Source Current (Diode Conduction) a
Power Dissipation a
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IS
PD
Tj, Tstg
Ratings
Maximum
150
±20
1.1
±10
1.1
1.30
-55 ~ 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction to Ambient a
Notes
t ≦ 10 sec
Steady State
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature.
Symbol
RJA
Typ Max
93 110
130 150
Unit
V
V
A
A
A
W
°C
Unit
°C / W
http://www.SeCoSGmbH.com/
20-Aug-2010 Rev. A
Any changes of specification will not be informed individually.
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| PDF Descargar | [ Datasheet SMG2390N.PDF ] | |
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