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PDF SMG2371P Data sheet ( Hoja de datos )
| Número de pieza | SMG2371P | |
| Descripción | P-Channel MosFET | |
| Fabricantes | SeCoS | |
| Logotipo |  |
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Elektronische Bauelemente
SMG2371P
-1A, -100V, RDS(ON) 1.2
P-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low RDS(on) trench technology.
Low thermal impedance.
Fast switching speed.
APPLICATIONS
PoE Power Sourcing Equipment
PoE Powered Devices
Telecom DC/DC converters.
White LED boost converters.
PACKAGE INFORMATION
Package
MPQ
SC-59
3K
LeaderSize
7’ inch
SC-59
A
L
3
Top View
CB
12
KE
1
D
F GH
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.25 3.00
1.30 1.70
1.00 1.40
1.70 2.30
0.35 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.10 REF.
0.40 REF.
0.10 0.20
0.45 0.55
0.85 1.15
1
3
2
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Drain-Source Voltage
VDS -100
Gate-Source Voltage
Continuous Drain Current 1
TA=25°C
TA=70°C
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
Power Dissipation 1
TA=25°C
TA=70°C
Operating Junction and Storage Temperature Range
VGS
ID
IDM
IS
PD
TJ, TSTG
±20
-1
-0.8
-10
-1.6
1.3
0.8
-55 ~ 150
Thermal Resistance Data
Maximum Junction to Ambient 1
t≦10 sec
Steady-State
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
RθJA
100
166
Unit
V
V
A
A
A
W
°C
°C/W
http://www.SeCoSGmbH.com/
15-Mar-2011 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet SMG2371P.PDF ] | |
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