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PDF SMG2343PE Data sheet ( Hoja de datos )

Número de pieza SMG2343PE
Descripción P-Channel MosFET
Fabricantes SeCoS 
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No Preview Available ! SMG2343PE Hoja de datos, Descripción, Manual

Elektronische Bauelemente
SMG2343PE
-3.6 A, -30 V, RDS(ON) 57 m
P-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density trench process
to provide low RDS(on) and to ensure minimal power loss and heat dissipation.
Typical applications are DC-DC converters and power management in
portable and battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
FEATURES
Low RDS(on) provides higher efficiency and extends battery life.
Low thermal impedance copper leadframe SC-59 saves board
space.
Fast switching speed.
High performance trench technology.
K
F
SC-59
A
L
3
Top View
1
E
2
CB
1
D
G
H
3
2
J
PRODUCT SUMMARY
PRODUCT SUMMARY
VDS(V)
-30
RDS(on) (m
57@VGS= -10V
89@VGS= -4.5V
ID(A)
-3.6
-2.8
REF.
A
B
C
D
E
F
Millimeter
Min.
2.70
2.25
1.30
Max.
3.10
3.00
1.70
1.00 1.40
1.70 2.30
0.35 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.10 REF.
0.40 REF.
0.10 0.20
0.45 0.55
0.85 1.15
PACKAGE INFORMATION
Package
MPQ
SC-59
3K
LeaderSize
7’ inch
ESD
Protection Diode
2KV
ABSOLUTE MAXIMUM RATINGS AND THERMAL DATA(TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current A
TA=25°C
TA=70°C
Pulsed Drain Current B
Continuous Source Current (Diode Conduction) A
Power Dissipation A
TA=25°C
TA=70°C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
THERMAL RESISTANCE DATA
Maximum Junction to Ambient A
t 5 sec
Steady-State
RθJA
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature.
RATING
-30
±25
-3.6
-2.9
-10
0.4
1.25
0.8
-55 ~ 150
100
150
UNIT
V
V
A
A
A
W
°C
°C / W
http://www.SeCoSGmbH.com/
12-Nov-2010 Rev. A
Any changes of specification will not be informed individually.
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