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PDF SMG2339P Data sheet ( Hoja de datos )

Número de pieza SMG2339P
Descripción P-Channel MosFET
Fabricantes SeCoS 
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No Preview Available ! SMG2339P Hoja de datos, Descripción, Manual

Elektronische Bauelemente
SMG2339P
-3.6 A, -30 V, RDS(ON) 0.057
P-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The miniature surface mount MOSFETs utilize a high cell density process
Low RDS(on) assures minimal power loss and conserves energy, making this
device ideal for use in power management circuitry.
Typical applications are lower voltage application, power management in
portable and battery-powered products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
FEATURES
Low RDS(on) provides higher efficiency and extends battery life.
Fast Switch.
Low Gate Charge.
Miniature SC-59 surface mount package saves board space.
SC-59
A
L
3
Top View
CB
12
KE
1
D
F GH
3
2
J
PRODUCT SUMMARY
PRODUCT SUMMARY
VDS(V)
-30
RDS(on) (
0.057@VGS= -4.5V
0.089@VGS= -2.5V
ID(A)
-3.6
-2.8

Gate

Drain
REF.
A
B
C
D
E
F
Millimeter
Min.
2.70
2.25
1.30
Max.
3.10
3.00
1.70
1.00 1.40
1.70 2.30
0.35 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.10 REF.
0.40 REF.
0.10 0.20
0.45 0.55
0.85 1.15

Source
ABSOLUTE MAXIMUM RATINGS AND THERMAL DATA(TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current A
TA=25°C
TA=70°C
Pulsed Drain Current B
Continuous Source Current (Diode Conduction) A
Power Dissipation A
TA=25°C
TA=70°C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
THERMAL RESISTANCE DATA
Maximum Junction to Ambient A
t5 sec
Steady-State
RθJA
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature.
RATING
-30
±12
±3.6
±2.9
±10
0.4
1.25
0.8
-55 ~ 150
100
150
UNIT
V
V
A
A
A
W
°C
°C/W
http://www.SeCoSGmbH.com/
07-Jul-2010 Rev. A
Any changes of specification will not be informed individually.
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