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PDF SMG2330N Data sheet ( Hoja de datos )
| Número de pieza | SMG2330N | |
| Descripción | N-Channel MosFET | |
| Fabricantes | SeCoS | |
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Elektronische Bauelemente
SMG2330N
5.2A, 30V, RDS(ON) 32mΩ
N-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize High
Cell Density process. Low RDS(on) assures minimal power
loss and conserves energy, making this device ideal for
use in power management circuitry. Typical applications are
PWMDC-DC converters, power management in portable
and battery-powered products such as computers, printers,
battery charger, telecommunication power system, and
telephones power system.
FEATURES
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
Miniature SOT-23 Surface Mount Package Saves Board Space
High power and current handling capability
Low side high current DC-DC Converter applications
PACKAGE INFORMATION
Package
MPQ
SC-59
3K
Leader Size
7 inch
SC-59
A
L
3
Top View
CB
12
KE
3
1
2
D
F GH J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.70 3.10
2.25 3.00
1.30 1.70
1.00 1.40
1.70 2.30
0.35 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.10 REF.
0.40 REF.
0.10 0.20
0.45 0.55
0.85 1.15
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDSS
Continuous Gate-Source Voltage
VGSS
Continuous Drain Current1
TA=25°C
TA=70°C
Pulsed Drain Currentb2
Continuous Source Current (Diode Conduction) 1
ID
IDM
IS
Power Dissipationa1
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range
TJ, Tstg
Thermal Resistance Rating
Maximum Junction to Ambient1
t≦5 sec
Steady-State
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature
RθJA
http://www.SeCoSGmbH.com/
4-Jul-2011 Rev. A
Rating
30
±20
5.2
4.1
30
1.6
1.3
0.8
-55~150
100
166
Unit
V
V
A
A
A
W
°C
°C / W
°C / W
Any changes of specification will not be informed individually.
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| PDF Descargar | [ Datasheet SMG2330N.PDF ] | |
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