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PDF SMG2326N Data sheet ( Hoja de datos )
| Número de pieza | SMG2326N | |
| Descripción | N-Channel MosFET | |
| Fabricantes | SeCoS | |
| Logotipo |  |
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Elektronische Bauelemente
SMG2326N
2.2 A, 20 V, RDS(ON) 70 m
N-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize High
Cell Density process. Low RDS(on) assures minimal power
loss and conserves energy, making this device ideal for use
in power management circuitry.
FEATURES
Low RDS(on) provides higher efficiency and extends
battery life.
Miniature SC-59 surface mount Package saves
board space.
SC-59
A
L
3
Top View
CB
12
KE
1
D
F GH
3
2
J
Application
DC-DC converters, power management in portable
and battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless telephones.
PACKAGE INFORMATION
Package
MPQ
SC-59
3K
LeaderSize
7’ inch
REF.
A
B
C
D
E
F
Millimeter
Min.
2.70
2.25
1.30
1.00
Max.
3.10
3.00
1.70
1.40
1.70 2.30
0.35 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.10 REF.
0.40 REF.
0.10 0.20
0.45 0.55
0.85 1.15
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current 1
TA=25°C
TA=70°C
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
VDS
VGS
ID
IDM
IS
20
±8
2.2
1.8
8
0.6
Power Dissipation 1
TA=25°C
TA=70°C
Operating Junction and Storage Temperature Range
PD
TJ, TSTG
1.25
0.8
-55 ~ 150
Thermal Resistance Ratings
Maximum Junction to Ambient 1
t≦5 sec
Steady-State
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
RθJA
100
166
Unit
V
V
A
A
A
W
°C
°C/W
http://www.SeCoSGmbH.com/
14-Feb-2011 Rev. A
Any changes of specification will not be informed individually.
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