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PDF SMG2319P Data sheet ( Hoja de datos )
| Número de pieza | SMG2319P | |
| Descripción | P-Channel MosFET | |
| Fabricantes | SeCoS | |
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Hay una vista previa y un enlace de descarga de SMG2319P (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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Elektronische Bauelemente
SMG2319P
-2.1A , -30V , RDS(ON) 200 m
P-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The miniature surface mount MOSFETs utilize
high cell density process. Low RDS(on) assures minimal
power loss and conserves energy, making this
device ideal for use in power management circuitry.
FEATURES
Low RDS(on) provides higher efficiency and extends
battery life.
Fast Switch.
Low Gate Charge.
Miniature SC-59 Surface Mount Package Saves
Board Space.
APPLICATION
Voltage control small signal switch, power management
in portable and battery-powered products such as computer
portable electronics and other battery power application.
PACKAGE INFORMATION
Package
MPQ
SC-59
3K
Leader Size
7’ inch
SC-59
A
L
3
Top View
CB
12
KE
1
D
F GH
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min.
2.70
2.25
1.30
Max.
3.10
3.00
1.70
1.00 1.40
1.70 2.30
0.35 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.10 REF.
0.40 REF.
0.10 0.20
0.45 0.55
0.85 1.15
1
3
2
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current 1
TA=25°C
TA=70°C
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
Power Dissipation 1
TA=25°C
TA=70°C
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
Thermal Resistance Data
Maximum Junction to Ambient 1
t≦5 sec
Steady-State
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
RθJA
Ratings
-30
±20
-2.1
-1.7
±10
-0.4
1.25
0.8
-55 ~ 150
250
285
Unit
V
V
A
A
A
W
°C
°C/W
http://www.SeCoSGmbH.com/
12-Apr-2011 Rev. B
Any changes of specification will not be informed individually.
Page 1 of 5
1 page  
Elektronische Bauelemente
CHARACTERISTIC CURVE
SMG2319P
-2.1A , -30V , RDS(ON) 200 m
P-Channel Enhancement MOSFET
http://www.SeCoSGmbH.com/
12-Apr-2011 Rev. B
Any changes of specification will not be informed individually.
Page 5 of 5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SMG2319P.PDF ] | |
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