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PDF SMG2302N Data sheet ( Hoja de datos )
| Número de pieza | SMG2302N | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | SeCoS | |
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Elektronische Bauelemente
SMG2302N
3.4 A, 20 V, RDS(ON) 76 m
N-Channel Enhancement Mode MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a High
Cell Density trench process to provide Low RDS(on) and to
ensure minimal power loss and heat dissipation. Typical
applications are
FEATURES
Low RDS(on) provides higher efficiency and extends
battery life.
Low thermal impedance copper lead frame SC-59
saves board space.
Fast switching speed.
High performance trench technology.
Application
DC-DC converters and power management in portable
and battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
PACKAGE INFORMATION
Package
MPQ
SC-59
3K
LeaderSize
7’ inch
SC-59
A
L
3
Top View
CB
12
KE
1
D
F GH
3
2
J
REF.
A
B
C
D
E
F
Millimeter
Min.
2.70
2.25
1.30
Max.
3.10
3.00
1.70
1.00 1.40
1.70 2.30
0.35 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.10 REF.
0.40 REF.
0.10 0.20
0.45 0.55
0.85 1.15
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current 1
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
Power Dissipation 1
Operating Junction and Storage Temperature Range
ID @ TA=25°C
ID @ TA=70°C
PD @ TA=25°C
PD @ TA=70°C
VGS
ID
IDM
IS
PD
Tj, Tstg
Thermal Resistance Ratings
Maximum Junction to Ambient 1
Notes:
1 Surface Mounted on 1” x 1” FR4 Board.
2 Pulse width limited by maximum junction temperature.
t ≦ 5 sec
Steady State
RJA
Ratings
20
±8
3.4
2.2
10
1.6
1.25
0.8
-55 ~ 150
100
166
Unit
V
V
A
A
A
A
W
W
°C
°C / W
http://www.SeCoSGmbH.com/
11-Feb-2011 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet SMG2302N.PDF ] | |
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