(PDF) KTC4347 Datasheet - NPN Transistor

Número de pieza	KTC4347
Descripción	NPN Transistor
Fabricantes	WEJ
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No Preview Available ! RoHS KTC4347 KTC4373 TRANSISTOR (NPN) DFEATURES Power dissipation TPCM: 500 mW (Tamb=25℃) .,LCollector current ICM: 800 Collector-base voltage mA OV(BR)CBO: 120 V Operating and storage junction temperature range CTJ, Tstg: -55℃ to +150℃ SOT-89 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter NCollector-base breakdown voltage Collector-emitter breakdown voltage OEmitter-base breakdown voltage RCollector cut-off current TEmitter cut-off current CDC current gain Collector-emitter saturation voltage EBase-emitter voltage LTransition frequency ECollector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE fT Cob Test conditions Ic=1mA, IE=0 Ic=10mA, IB=0 IE=1mA, IC=0 VCB=120V, IE=0 VEB=5V, IC=0 VCE=5V, IC=100mA IC=500mA, IB=50mA VCE=5V, IC=500mA VCE=5V, IC=500mA VCB=10V, IE=0, f=1MHz MIN TYP MAX UNIT 120 V 120 V 5V 0.1 µA 0.1 µA 80 240 1V 1V 120 MHz 30 pF JCLASSIFICATION OF hFE ERank WRange O 80-160 Y 120-240 Marking CO CY WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] 1 page

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PDF KTC4347 Data sheet ( Hoja de datos )