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PDF CMPT992E Data sheet ( Hoja de datos )
| Número de pieza | CMPT992E | |
| Descripción | SURFACE MOUNT PNP LOW NOISE SILICON TRANSISTOR | |
| Fabricantes | Central Semiconductor | |
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CMPT992
CMPT992P
CMPT992F
CMPT992E
SURFACE MOUNT PNP LOW NOISE
SILICON TRANSISTOR
SOT-23 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT992 types
are PNP silicon low noise transistors manufactured by
the epitaxial planar process, epoxy molded in a surface
mount package, designed for low noise amplifier
applications where a high BVCEO is required.
MARKING CODE: SEE MARKING CODE TABLE ON
FOLLOWING PAGE.
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
ΘJA
110
110
5.0
50
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VBE(ON)
fT
Cob
NF
VEB=5.0V
IC=100μA
IC=1.0mA
IE=10μA
IC=10mA, IB=1.0 mA
VCE=6.0V, IC=1.0mA
VCE=6.0V, IC=1.0mA
VCB=30V, IE=0, f=1.0MHz
VCE=5.0V, IC=100μA, RS=10kΩ,
f=10Hz to 15.7KHz
110
110
5.0
0.55
50
MAX
30
0.30
0.65
3.0
3.0
UNITS
V
V
V
mA
mW
°C
°C/W
UNITS
nA
V
V
V
V
V
MHz
pF
dB
hFE VCE=6.0V, IC=100μA
hFE VCE=6.0V, IC=1.0mA
CMPT992
MIN MAX
150 -
200 800
CMPT992P
MIN MAX
150 -
200 400
CMPT992F
MIN MAX
150 -
300 600
CMPT992E
MIN MAX
150 -
400 800
R2 (1-February 2010)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet CMPT992E.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| CMPT992 | SURFACE MOUNT PNP LOW NOISE SILICON TRANSISTOR | Central Semiconductor |
| CMPT992E | SURFACE MOUNT PNP LOW NOISE SILICON TRANSISTOR | Central Semiconductor |
| CMPT992F | SURFACE MOUNT PNP LOW NOISE SILICON TRANSISTOR | Central Semiconductor |
| CMPT992P | SURFACE MOUNT PNP LOW NOISE SILICON TRANSISTOR | Central Semiconductor |
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