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PDF CMLT5554 Data sheet ( Hoja de datos )
| Número de pieza | CMLT5554 | |
| Descripción | HIGH VOLTAGE TRANSISTOR | |
| Fabricantes | Central Semiconductor | |
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CMLT5554
SURFACE MOUNT SILICON
DUAL, COMPLEMENTARY
HIGH VOLTAGE TRANSISTOR
w w w. c e n t r a l s e m i . c o m
The CENTRAL SEMICONDUCTOR CMLT5554
consists of one 2N5551 NPN silicon transistor and one
individual isolated complementary 2N5401 PNP silicon
transistor, manufactured by the epitaxial planar process
and epoxy molded in an SOT-563 surface mount
package. This device has been designed for high
voltage amplifier applications.
MARKING CODE: 5C4
SOT-563 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
ΘJA
NPN (Q1)
PNP (Q2)
180 160
160 150
6.0 5.0
600
350
-65 to +150
357
UNITS
V
V
V
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
NPN (Q1)
SYMBOL
TEST CONDITIONS
MIN MAX
ICBO
VCB=120V
- 50
ICBO
VCB=100V
--
ICBO
VCB=120V, TA=100°C
- 50
ICBO
VCB=100V, TA=150°C
--
BVCBO
IC=100μA
180 -
BVCEO
IC=1.0mA
160 -
BVEBO
IE=10μA
6.0 -
VCE(SAT) IC=10mA, IB=1.0mA
- 0.15
VCE(SAT) IC=50mA, IB=5.0mA
- 0.2
VBE(SAT)
IC=10mA, IB=1.0mA
- 1.0
VBE(SAT)
IC=50mA, IB=5.0mA
- 1.0
hFE VCE=5.0V, IC=1.0mA
80 -
hFE VCE=5.0V, IC=10mA
80 250
hFE VCE=5.0V, IC=50mA
30 -
fT VCE=10V, IC=10mA, f=100MHz
100 300
Cob VCB=10V, IE=0, f=1.0MHz
- 6.0
hfe VCE=10V, IC=1.0mA, f=1.0kHz
50 200
NF VCE=5.0V, IC=200μA, RS=10Ω,
f=10Hz to 15.7kHz
- 8.0
PNP (Q2)
MIN MAX
--
- 50
--
- 50
160 -
150 -
5.0 -
- 0.2
- 0.5
- 1.0
- 1.0
50 -
60 240
50 -
100 300
- 6.0
40 200
UNITS
nA
nA
μA
μA
V
V
V
V
V
V
V
MHz
pF
- 8.0
dB
R3 (29-June 2015)
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet CMLT5554.PDF ] | |
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