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PDF CMLT5087EM Data sheet ( Hoja de datos )
| Número de pieza | CMLT5087EM | |
| Descripción | PNP TRANSISTOR | |
| Fabricantes | Central Semiconductor | |
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CMLT5087EM
SURFACE MOUNT SILICON
DUAL, MATCHED
PNP TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLT5087EM
consists of two individual, isolated 5087E PNP silicon
transistors with matched VBE(ON) characteristics.
This device is designed for applications requiring high
gain and low noise.
MARKING CODE: L87
SOT-563 CASE
• Device is Halogen Free by design
FEATURES:
• Transistor pair matched for VBE(ON)
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
ΘJA
50
50
5.0
100
350
-65 to +150
357
UNITS
V
V
V
mA
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN TYP MAX
ICBO
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
hFE
hFE
hFE
hFE
fT
Cob
Cib
hfe
NF
VCB=20V
VEB=3.0V
IC=100μA
IC=1.0mA
IE=100μA
IC=10mA, IB=1.0mA
IC=100mA, IB=10mA
IC=10mA, IB=1.0mA
VCE=5.0V, IC=0.1mA
VCE=5.0V, IC=1.0mA
VCE=5.0V, IC=10mA
VCE=5.0V, IC=100mA
VCE=5.0V, IC=500μA, f=20MHz
VCB=5.0V, IE=0, f=1.0MHz
VBE=0.5V, IC=0, f=1.0MHz
VCE=5.0V, IC=1.0mA, f=1.0kHz
VCE=5.0V, IC=100μA, RS=10kΩ
f=10Hz to 15.7kHz
50
50
5.0
300
300
300
50
100
350
50
50
150
105
7.5
50 100
225 400
700 800
390 900
380
350
75
4.0
15
1400
3.0
UNITS
nA
nA
V
V
V
mV
mV
mV
MHz
pF
pF
dB
MATCHING CHARACTERISTICS:
SYMBOL
TEST CONDITIONS
|VBE1-VBE2|
|VBE1-VBE2|
|VBE1-VBE2|
|VBE1-VBE2|
VCE=5.0V, IC=1.0μA
VCE=5.0V, IC=5.0μA
VCE=5.0V, IC=10μA
VCE=5.0V, IC=100μA
MIN
MAX
UNITS
10 mV
10 mV
10 mV
10 mV
R3 (18-June 2015)
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet CMLT5087EM.PDF ] | |
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