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PDF TST30U60C Data sheet ( Hoja de datos )

Número de pieza TST30U60C
Descripción Trench Schottky Rectifier
Fabricantes Taiwan Semiconductor 
Logotipo Taiwan Semiconductor Logotipo



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No Preview Available ! TST30U60C Hoja de datos, Descripción, Manual

TST30U60C
Taiwan Semiconductor
30A, 60V Trench Schottky Rectifier
FEATURES
- Patented Trench Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Low power loss/ High efficiency
- High forward surge capability
- Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
Trench Schottky barrier rectifier are designed for high frequency
miniature switched mode power supplies such as adapters, lighting
and on-board DC/DC converters.
TO-220AB
MECHANICAL DATA
Case: TO-220AB
Molding compound meets UL 94 V-0 flammability rating
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity: As marked
Mounting torque: 0.56 Nm max.
Weight: 1.88 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
SYMBOL
TST30U60C
Maximum repetitive peak reverse voltage
Maximum average forward rectified
current
per device
per diode
VRRM
IF(AV)
60
30
15
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load per diode
Voltage rate of change (Rated VR)
Instantaneous forward voltage per diode
(Note1)
IF = 15A
IF = 15A
TJ = 25°C
TJ = 125°C
Instantaneous reverse current per diode at rated
reverse voltage
Typical thermal resistance per diode
TJ= 25°C
TJ = 125°C
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with pulse width=300μs, 1% duty cycle
IFSM
dV/dt
VF
IR
RθJC
TJ
TSTG
MIN.
-
-
-
-
250
10000
TYP.
0.48
0.43
-
-
4
- 55 to +150
- 55 to +150
MAX.
0.57
0.52
500
60
UNIT
V
A
A
V/μs
V
μA
mA
°C/W
°C
°C
Document Number: DS_D1501011
Version: B15

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