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PDF TST30L45C Data sheet ( Hoja de datos )

Número de pieza TST30L45C
Descripción Trench Schottky Rectifier
Fabricantes Taiwan Semiconductor 
Logotipo Taiwan Semiconductor Logotipo



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No Preview Available ! TST30L45C Hoja de datos, Descripción, Manual

TST30L45C
Taiwan Semiconductor
Trench Schottky Rectifier
FEATURES
- Patented Trench Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Low power loss/ High efficiency
- High forward surge capability
- Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
TO-220AB
TYPICAL APPLICATIONS
Trench Schottky barrier rectifier are designed for high frequency
miniature switched mode power supplies such as adapters, lighting
and on-board DC/DC converters.
MECHANICAL DATA
Case: TO-220AB
Molding compound meets UL 94 V-0 flammability rating
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity: As marked
Mounting torque: 0.56 Nm max.
Weight: 1.88 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
SYMBOL
TST30L45C
Maximum repetitive peak reverse voltage
Maximum average forward rectified
current
per device
per diode
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load per diode
Voltage rate of change (Rated VR)
Instantaneous forward voltage per diode
( Note1 )
IF = 15A
IF = 30A
IF = 15A
Instantaneous reverse current per diode at rated
reverse voltage
Typical thermal resistance per diode
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with pulse width=300μs, 1% duty cycle
VRRM
IF(AV)
IFSM
dV/dt
VF
IR
RθJC
TJ
TSTG
45
30
15
120
10000
MIN TYP
- 0.45
- 0.57
- 0.41
--
--
1.9
- 55 to +150
- 55 to +150
MAX
-
0.67
-
650
250
UNIT
V
A
A
V/μs
V
μA
mA
°C/W
°C
°C
Document Number: DS_D1411042
Version: B14

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