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PDF CLL4150 Data sheet ( Hoja de datos )
| Número de pieza | CLL4150 | |
| Descripción | HIGH SPEED SILICON DIODES | |
| Fabricantes | CDIL | |
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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
HIGH SPEED SILICON DIODES
CLL4150
SOD - 80C
Mini MELF (LL- 34 )
Polarity: Cathode is indicated by a black band
Hermetically Sealed, Glass Silicon Diodes
Intended for General Purpose use in Computer and Industrial Application
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Repetitive Peak Reverse Voltage
Continuous Reverse Voltage
Continuous Forward Current
Repetitive Peak Forward Current
Non Repetitive Peak Forward Current t=1 µs
t=1 ms
t=1 s
Power Dissipation up to Ta=25ºC
Storage Temperature
Junction Temperature
SYMBOL
VRRM
VR
*IF
IFRM
IFSM
*Ptot
Tstg
Tj
VALUE
75
50
300
600
4.0
1.0
0.5
500
- 65 to 200
200
THERMAL RESISTANCE
Junction to tie point
Junction to Ambient in free air
Rth (j-tp)
*Rth (j-a)
300
350
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless otherwise specified)
DESCRIPTION
SYMBOL
TEST CONDITION
Forward Voltage
VF IF=1mA
IF=10mA
IF=50mA
IF=100mA
IF=200mA
Reverse Breakdown Voltage
VBR IR=100µA
Reverse Current
IR VR= 50V
VR=50V, Tj=150ºC
MIN
0.54
0.66
0.76
0.82
0.87
75
DYNAMIC CHARACTERISTICS
Diode Capacitance
Reverse Recovery Time
Forward Recovery Time
Cd
trr
tfr
*Device mounted on an FR4 printed circuit board
CLL4150Rev201002E
VR=0V, f=1MHz
IF=10mA, to IR=1mA,RL=100Ω
Measured @ IR=0.1mA
IF=200mA, tr =0.4ns
Measured @ VF=1V
.
MAX
0.62
0.74
0.86
0.92
1.00
100
100
2.5
6.0
10
UNIT
V
V
mA
mA
A
A
A
mW
ºC
ºC
K/W
K/W
UNIT
V
V
V
V
V
V
nA
µA
pF
ns
ns
Continental Device India Limited
Data Sheet
Page 1 of 3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet CLL4150.PDF ] | |
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