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Número de pieza | RT3DAAM | |
Descripción | SMALL-SIGNAL DIODE | |
Fabricantes | Isahaya Electronics | |
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Notice:This is not a final specification
Some parametric are subject to change.
〈SMALL-SIGNAL DIODE〉
RT3DAAM
FOR HIGH SPEED SWITCHING APPLICATION
SILICON EPITAXIAL TYPE(ANODE COMMON)
DESCRIPTION
RT3DAAM is a super mini package plastic seal type silicon epitaxial
type composite diode, built with two Anode common MC2836.
Due to the small pin capacitance, short switching time(reverse
recovery time),It is most suitable for high speed switching application
and limitter,clipper application.
OUTLINEDRAWING
Unit:mm
FEATURE
●Small pin capacitance
●Quick switching time
●High voltage
●Quadruple diodes and super mini package for mounting
APPLICATION
For general high speed switching of audio machine,VTR.
Equivalent circuit
MC2836
JEITA:SC-88
JEDEC:-
MC2836
MAXIMUM RATINGS(Ta=25℃)(All Di COMMON)
Symbol
Parameter
Ratings
Unit
VRM Peak reverse voltage
85 V
VR DC reverse voltage
80 V
I FSM Surge current(1μs)
4A
I FM Peak forward current
300 mA
I O Average rectification current
100
mA
PT Total allowance dissipation 200 mW
Tj Junction temperature
+150
℃
Tstg Storage temperature
-55~+150
℃
MARKING ⑥ ⑤ ④
DAA
●
Type Name
①②③
ELECTRICAL CHARACTERISTICS(Ta=25℃)(All Di COMMON)
Parameter
Symbol
Test conditions
Forward voltage
Reverse current
Pin capacitance
Reverse recovery time
VF1 I F=10mA
VF2 I F=50mA
VF3 I F=100mA
IR1 VR=75V
IR2 VR=80V
Ct VR=0V,f=1MHz
trr (Refer to test circuit)
Limits
Min Typ Max
- 0.77 0.9
- 090 1.0
- 0.95 1.2
- - 0.1
- - 0.5
- 2.8 4.0
- - 4.0
Uniit
V
μA
pF
ns
ISAHAYA ELECTRONICS CORPORATION
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet RT3DAAM.PDF ] |
Número de pieza | Descripción | Fabricantes |
RT3DAAM | SMALL-SIGNAL DIODE | Isahaya Electronics |
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