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Número de pieza | SPR50N03 | |
Descripción | N-Channel Enhancement Mode Power MOSFET | |
Fabricantes | SeCoS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SPR50N03 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! Elektronische Bauelemente
SPR50N03
51A , 30V , RDS(ON) 9 mΩ
N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SPR50N03 provide the designer with the best
combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness. The PR-8PP package
is universally preferred for all commercial-industrial surface
mount applications and suited for low voltage applications
such as DC/DC converters.
PR-8PP
FEATURES
Lower Gate Charge
Simple Drive Requirement
Fast Switching Characteristic
MARKING
50N03
= Date code
PACKAGE INFORMATION
Package
MPQ
PR-8PP
3K
Leader Size
13 inch
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.9 5.1
5.7 5.9
5.95 6.2
1.27 BSC.
0.35 0.49
0.1 0.2
REF.
G
H
I
J
K
L
Millimeter
Min. Max.
0.8 1.0
0.254 Ref.
4.0 Ref.
3.4 Ref.
0.6 Ref.
1.4 Ref.
SD
SD
SD
GD
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Drain-Source Voltage
Gate-Source Voltage
TC=25°C
Continuous Drain Current 1@VGS=10V TC=100°C
TA=25°C
Pulsed Drain Current 2
Single Pulse Avalanche Energy 3
TA=70°C
VDS
VGS
ID
IDM
EAS
30
±20
51
36
12
9.6
130
130
Avalanche Current
Power Dissipation 4
TC=25°C
IAS
PD
34
46
Operating Junction & Storage Temperature
TJ, TSTG
-55~150
Thermal Resistance Rating
Thermal Resistance Junction-Ambient1(Max).
Thermal Resistance Junction-Case1(Max).
RθJA
RθJC
62
2.7
Unit
V
V
A
A
A
A
A
mJ
A
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
20-May-2014 Rev.A
Any changes of specification will not be informed individually.
Page 1 of 4
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet SPR50N03.PDF ] |
Número de pieza | Descripción | Fabricantes |
SPR50N03 | N-Channel Enhancement Mode Power MOSFET | SeCoS |
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