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PDF SSD50P06-15D Data sheet ( Hoja de datos )

Número de pieza SSD50P06-15D
Descripción P-Ch Enhancement Mode Power MOSFET
Fabricantes SeCoS 
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Elektronische Bauelemente
SSD50P06-15D
-44A, -60V, RDS(ON) 17mΩ
P-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
These miniature surface mount MOSFETs utilize high cell
density process.Low RDS(on) assures minimal power loss
and conserves energy, making thisdevice ideal for use in
power management circuitry. Typical applications are
PWMDC-DC converters, power management in portable
and battery-powered products such as computers, printers,
battery charger, telecommunication power system, and
telephones power system.
FEATURES
Low RDS(on) provides higher efficiency and extends battery life.
Miniature TO-252 surface mount package saves board space.
High power and current handling capability.
Extended VGS range (±25) for battery pack applications.
PACKAGE INFORMATION
Package
MPQ
TO-252
2.5K
Leader Size
13’ inch
TO-252(D-Pack)
A
BC
D
GE
K HF
MJ
N
O
P
REF.
Millimeter
Min. Max.
REF.
Millimeter
Min. Max.
A 6.4
6.8 J
2.30 REF.
B 5.20 5.50 K 0.70 0.90
C 2.20 2.40 M 0.50 1.1
D 0.45 0.58 N 0.9 1.6
E 6.8 7.3 O 0 0.15
F 2.40 3.0 P 0.43 0.58
G 5.40 6.2
H 0.8 1.20

Drain

Gate
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @TA=251
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
Total Power Dissipation @TA=251
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
Thermal Resistance Ratings
Maximum Thermal Resistance Junction-Ambient 1
RθJA
Maximum Thermal Resistance Junction-Case
RθJC
Notes
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
Ratings
-60
±20
-44
-150
-48
50
-55 ~ 175
40
3

Source
Unit
V
V
A
A
A
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
21-Feb-2014 Rev.C
Any changes of specification will not be informed individually.
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