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PDF SSD50P03-09D Data sheet ( Hoja de datos )
| Número de pieza | SSD50P03-09D | |
| Descripción | P-Ch Enhancement Mode Power MOSFET | |
| Fabricantes | SeCoS | |
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Elektronische Bauelemente
SSD50P03-09D
61A, -30V, RDS(ON) 9mΩ
P-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
These miniature surface mount MOSFETs utilize high
cell density process. Low RDS(on) assures minimal power
loss and conserves energy, making this device ideal for
use in power management circuitry. Typical applications
are PWMDC-DC converters, power management in
portable and battery-powered products such as computers,
printers, battery charger, telecommunication power system,
and telephones power system.
FEATURES
Low RDS(on) provides higher efficiency and extends
battery life.
Miniature TO-252 surface mount package saves board
space.
High power and current handling capability.
Extended VGS range (±25) for battery pack applications.
PACKAGE INFORMATION
Package
MPQ
TO-252
2.5K
LeaderSize
13’ inch
TO-252(D-Pack)
A
BC
D
GE
K HF
MJ
N
O
P
REF.
Millimeter
Min. Max.
REF.
Millimeter
Min. Max.
A 6.4
6.8 J
2.30 REF.
B 5.20 5.50 K 0.70 0.90
C 2.20 2.40 M 0.50 1.1
D 0.45 0.58 N 0.9 1.6
E 6.8 7.3 O 0 0.15
F 2.40 3.0 P 0.43 0.58
G 5.40 6.2
H 0.8 1.20
Gate
Drain
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Source
PARAMETER
SYMBOL
RATINGS
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current 1
ID @TA=25℃
Pulsed Drain Current 2
IDM
Continuous Source Current (Diode Conduction) 1
IS
Total Power Dissipation 1
PD @TA=25℃
Operating Junction and Storage Temperature Range TJ, TSTG
-30
±25
61
±40
-30
50
-55 ~ 175
THERMAL RESISTANCE RATINGS
Maximum Thermal Resistance Junction-Ambient 1
RθJA
50
Maximum Thermal Resistance Junction-Case
Notes：
1 Surface Mounted on 1” x 1” FR4 Board.
2 Pulse width limited by maximum junction temperature.
RθJC
3.0
UNIT
V
V
A
A
A
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
02-Dec-2010 Rev.A
Any changes of specification will not be informed individually.
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