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PDF SSD50N08-14D Data sheet ( Hoja de datos )
| Número de pieza | SSD50N08-14D | |
| Descripción | N-Ch Enhancement Mode Power MOSFET | |
| Fabricantes | SeCoS | |
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Elektronische Bauelemente
SSD50N08-14D
55A, 80V, RDS(ON) 11mΩ
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high
cell density trench process to provide low RDS(on) and to
ensure minimal power loss and heat dissipation.
FEATURES
Low RDS(on) provides higher efficiency and extends
battery life
Low thermal impedance copper leadframe TO-252
saves board space
Fast switching speed
High performance trench technology
APPLICATION
DC-DC converters and power management in portable
and battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
PACKAGE INFORMATION
Package
MPQ
TO-252
2.5K
Leader Size
13’ inch
TO-252(D-Pack)
A
BC
D
GE
K HF
MJ
N
O
P
REF.
Millimeter
Min. Max.
REF.
Millimeter
Min. Max.
A 6.4 6.8 J 2.30 REF.
B 5.20 5.50 K 0.70 0.90
C 2.20 2.40 M 0.50 1.1
D 0.45 0.58 N 0.9 1.6
E 6.8 7.3 O 0 0.15
F 2.40 3.0 P 0.43 0.58
G 5.40 6.2
H 0.8 1.20
2
Drain
1
Gate
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current 1
TA=25℃
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
Power Dissipation 1
TA=25℃
VDS
VGS
ID
IDM
IS
PD
80
±20
55
200
55
50
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Ratings
Maximum Thermal Resistance Junction-Ambient 1
RθJA
-55 ~ 175
40
Maximum Thermal Resistance Junction-Case
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
RθJC
3.0
3
Source
Unit
V
V
A
A
A
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
21-Jan-2014 Rev. A
Any changes of specification will not be informed individually.
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