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PDF SSD30P06-45D Data sheet ( Hoja de datos )

Número de pieza SSD30P06-45D
Descripción P-Ch Enhancement Mode Power MOSFET
Fabricantes SeCoS 
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Elektronische Bauelemente
SSD30P06-45D
P-Ch Enhancement Mode Power MOSFET
28A, -60V, RDS(ON) 49mΩ
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
These miniature surface mount MOSFETs utilize high cell density process.
Low RDS(on) assures minimal power loss and conserves energy, making this
device ideal for use in power management circuitry. Typical applications
are PWMDC-DC converters, power management in portable and battery-powered
products such as computers, printers, battery charger, telecommunication
power system, and telephones power system.
TO-252(D-Pack)
FEATURES
Low RDS(on) provides higher efficiency and extends battery life.
Miniature TO-252 surface mount package saves board space.
High power and current handling capability.
Extended VGS range (±25) for battery pack applications.
PRODUCT SUMMARY
VDS(V)
-60
PRODUCT SUMMARY
RDS(on) m(
49@VGS= -10V
60@VGS= -4.5V
ID(A)
28
24

Gate

Drain

Source
A
B
GE
K HF
MJ
C
D
N
O
P
REF.
Millimeter
Min. Max.
REF.
Millimeter
Min. Max.
A 6.4
6.8 J
2.30 REF.
B 5.20 5.50 K 0.70 0.90
C 2.20 2.40 M 0.50 1.1
D 0.45 0.58 N 0.9 1.6
E 6.8 7.3 O 0 0.15
F 2.40 3.0 P 0.43 0.58
G 5.40 6.2
H 0.8 1.20
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
Drain-Source Voltage
VDS -60
Gate-Source Voltage
Continuous Drain Current a
Pulsed Drain Current b
Continuous Source Current (Diode Conduction) a
Total Power Dissipation a
VGS
ID @TA=25
IDM
IS
PD @TA=25
±20
61
±40
-30
50
Operating Junction and Storage Temperature Range TJ, TSTG
-55 ~ 175
THERMAL RESISTANCE RATINGS
Maximum Thermal Resistance Junction-Ambient a
RθJA
50
Maximum Thermal Resistance Junction-Case
RθJC
3.0
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature.
UNIT
V
V
A
A
A
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
16-Aug-2010 Rev.A
Any changes of specification will not be informed individually.
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