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Número de pieza | S-L2SC2412KSMT3G | |
Descripción | General Purpose Transistor | |
Fabricantes | Leshan Radio Company | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de S-L2SC2412KSMT3G (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
• We declare that the material of product compliance with RoHS requirements.
• S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
ORDERING INFORMATION
Device
L2SC2412KQMT1G
S-L2SC2412KQMT1G
L2SC2412KQMT3G
S-L2SC2412KQMT3G
L2SC2412KRMT1G
S-L2SC2412KRMT1G
L2SC2412KRMT3G
S-L2SC2412KRMT3G
L2SC2412KSMT1G
S-L2SC2412KSMT1G
L2SC2412KSMT3G
S-L2SC2412KSMT3G
MAXIMUM RATINGS
Marking
BQ
BQ
BR
BR
G1F
G1F
Shipping
3000 Tape & Reel
10000 Tape & Reel
3000 Tape & Reel
10000 Tape & Reel
3000 Tape & Reel
10000 Tape & Reel
Rating
Symbol Value
Unit
Collector–Emitter Voltage
V CEO
50
V
Collector–Base Voltage
V CBO
60
V
Emitter–Base Voltage
V EBO
7.0
V
Collector Current — Continuous
Collector power dissipation
Junction temperature
IC
PC
Tj
150 mAdc
0.2 W
150 °C
Storage temperature
T stg -55 ~+150 °C
DEVICE MARKING
L2SC2412KQMT1G
Series
S-L2SC2412KQMT1G
Series
SC-74
654
CBE
EBC
123
L2SC2412KQMT1G =BQ L2SC2412KRMT1G =BR L2SC2412KSMT1G =G1F
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Collector–Emitter Breakdown Voltage
(IC = 1 mA)
Emitter–Base Breakdown Voltage
(IE = 50 µA)
Collector–Base Breakdown Voltage
(IC = 50 µA)
Collector Cutoff Current
(VCB = 60 V)
Emitter cutoff current
(VEB = 7 V)
Collector-emitter saturation voltage
(IC/ IB = 50 mA / 5m A)
DC current transfer ratio
(V CE = 6 V, I C= 1mA)
Transition frequency
(V CE = 12 V, I E= – 2mA, f =30MHz )
Output capacitance
(V CB = 12 V, I E= 0A, f =1MHz )
Symbol
V (BR)CEO
V (BR)EBO
V (BR)CBO
I CBO
I EBO
V CE(sat)
h FE
fT
C ob
Min
50
7
60
—
—
—
120
—
—
Typ Max Unit
— —V
— —V
— —V
— 0.1 µA
— 0.1 µA
— 0.4 V
–– 560 ––
180 –– MHz
2.0 3.5 pF
h FE values are classified as follows:
*Q
R
hFE
120~270
180~390
S
270~560
Rev.O 1/4
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet S-L2SC2412KSMT3G.PDF ] |
Número de pieza | Descripción | Fabricantes |
S-L2SC2412KSMT3G | General Purpose Transistor | Leshan Radio Company |
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