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PDF ISA1287AS1 Data sheet ( Hoja de datos )

Número de pieza ISA1287AS1
Descripción TRANSISTOR
Fabricantes Isahaya Electronics　
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〈SMALL-SIGNAL TRANSISTOR〉
ISA1287AS1
FOR RELAY DRIVE, POWOR SUPPLY APPLICATION
SILICON PNP EPITAXIAL TYPE
DESCRIPTION
ISA1287AS1 is a silicon PNP epitaxial type transistor.
Designed with high voltage, high collector current, dissipation
and high hFE.
Complementary with ISC3247AS1.
FEATURE
●High hFE hFE=400 to 800
●High voltage. VCEO=-50V
●Low collector to emitter saturation voltage.
VCE(sat)=-0.2V (@IC=-500mA, IB=-10mA)
●High collector dissipation. PC=600mW
APPLICATION
Relay drive or power supply of audio machine, VCR, and
other electronic machine.
MAXIMUM RATINGS（Ta=25℃）
.
Symbol
Parameter
VCBO Collector to Base voltage
VEBO Emitter to Base voltage
VCEO Collector to Emitter voltage
IC Collector current
ICM Peak collector current
Pc Collector dissipation
Tj Junction temperature
Tstg Storage temperature
Ratings
-50
-6
-50
-1
-2
600
＋150
-55～＋150
Unit
V
V
V
A
A
mW
℃
℃
OUTLINE DRAWING
4.0
0.1
0.45
2.5 2.5
①②③
JEITA：
JEDEC：
TERMINAL CONNECTER
①：EMITTER
②：COLLECTOR
③：BASE
Unit：ｍｍ
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Parameter
Parameter
Test conditions
V(BR)CBO
V(BR)EBO
V(BR)CEO
ICBO
IEBO
hFE※
VCE(sat)
fT
Cob
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E Saturation Voltage
Gain band width product
Collector output capacitance
IC=-10μA, IE=0mA
IE=-10μA, IC=0mA
IC=-1mA, RBE=∞
VCB=-40V, IE=0mA
VEB=-2V, IC=0mA
VCE=-6V, IC=-100mA
IC=-500mA, IB=-10mA
VCE=-10V, IE=10mA
VCB=-10V, IE=0mA, f=1MHz
Limits
Min Typ Max
Unit
-50 ― ― V
-6 ― ― V
-50 ― ― V
― ― -0.1 μA
― ― -0.1 μA
400 ― 800 ―
― -0.2 -0.5
V
― 90 ― MHz
― 30 ― pF
※） It shows hFE classification in right table.
Item
hFE
G
400～800
ISAHAYA ELECTRONICS CORPORATION

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