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PDF 2SD874A Data sheet ( Hoja de datos )
| Número de pieza | 2SD874A | |
| Descripción | NPN Plastic Encapsulated Transistor | |
| Fabricantes | SeCoS | |
| Logotipo |  |
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Elektronische Bauelemente
2SD874A
1A , 60V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Large collector power dissipation PC
Low collector-emitter saturation voltage VCE(sat)
Complementary to 2SB766A
CLASSIFICATION OF hFE (1)
Product-Rank 2SD874A-Q
Range
85~170
Marking
YQ
2SD874A-R
120~240
YR
2SD874A-S
170~340
YS
B
F
SOT-89
A
E
G
H
J
1
B
2
C
3
E
C
D
K
L
4
REF.
A
B
C
D
E
F
Millimeter
Min.
4.40
3.94
1.40
2.30
Max.
4.60
4.25
1.60
2.60
1.50 1.70
0.89 1.20
REF.
G
H
J
K
L
Millimeter
Min.
0.40
1.50
3.00
0.32
Max.
0.58
TYP
TYP
0.52
0.35 0.44
Collector
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Power Dissipation
Junction & Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
Ratings
60
50
5
1
500
150, -55~150
Base
Emitter
Unit
V
V
V
A
mW
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown
Emitter-Base Breakdown Boltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
COB
Min.
60
50
5
-
-
85
50
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
200
20
Max.
-
-
-
0.1
0.1
340
-
0.4
1.2
-
-
Unit
V
V
V
μA
μA
V
V
MHz
pF
Test conditions
IC=10μA, IE=0
IC=2mA, IB=0
IE=10μA, IC=0
VCB=20V, IE=0
VEB=4 V, IC=0
VCE=10V, IC= 500mA
VCE=5V, IC= 1A
IC=500mA, IB= 50mA
IC=500mA, IB= 50mA
VCE=10V, IC=50mA, f=200MHz
VCB=10V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/
23-Feb-2011 Rev. A
Any changes of specification will not be informed individually.
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| PDF Descargar | [ Datasheet 2SD874A.PDF ] | |
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