|
|
PDF 2SD874 Data sheet ( Hoja de datos )
| Número de pieza | 2SD874 | |
| Descripción | Silicon NPN epitaxial planer type | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de 2SD874 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
|
No Preview Available !
Transistor
2SD874, 2SD874A
Silicon NPN epitaxial planer type
For low-frequency power amplification
Complementary to 2SB766 and 2SB766A
s Features
q Large collector power dissipation PC.
q Low collector to emitter saturation voltage VCE(sat).
q Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SD874
base voltage 2SD874A
VCBO
30
60
V
Collector to 2SD874
emitter voltage 2SD874A
VCEO
25
50
V
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
1.5 A
Collector current
IC
1A
Collector power dissipation PC* 1 W
Junction temperature
Tj
150 ˚C
Storage temperature
Tstg –55 ~ +150 ˚C
* Printed circuit board: Copper foil area of 1cm2 or more, and the board
thickness of 1.7mm for the collector portion
s Electrical Characteristics (Ta=25˚C)
4.5±0.1
1.6±0.2
45°
0.4±0.08
0.5±0.08
1.5±0.1
3.0±0.15
321
marking
Unit: mm
1.5±0.1
0.4±0.04
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
Marking symbol : Z(2SD874)
Y(2SD874A)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base 2SD874
voltage
2SD874A
ICBO
VCBO
VCB = 20V, IE = 0
IC = 10µA, IE = 0
0.1 µA
30
V
60
Collector to emitter 2SD874
voltage
2SD874A
VCEO
IC = 2mA, IB = 0
25
50
V
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
*1hFE1 Rank classification
VEBO
hFE1*1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
IE = 10µA, IC = 0
5
V
VCE = 10V, IC = 500mA*2
85 160 340
VCE = 5V, IC = 1A*2
50
IC = 500mA, IB = 50mA*2
0.2 0.4
V
IC = 500mA, IB = 50mA*2
0.85 1.2
V
VCB = 10V, IE = –50mA, f = 200MHz 200 MHz
VCB = 10V, IE = 0, f = 1MHz
20 pF
*2 Pulse measurement
Rank
QR S
hFE1
Marking 2SD874
Symbol
2SD874A
85 ~ 170
ZQ
YQ
120 ~ 240
ZR
YR
170 ~ 340
ZS
YS
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SD874.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| 2SD870 | POWER TRANSISTORS(5A/1500V/50W) |  Mospec Semiconductor |
| 2SD870 | SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION) |  Wing Shing Computer Components |
| 2SD870 | 600V, 5A, NPN SILICON POWER TRANSISTOR |  SavantIC |
| 2SD871 | POWER TRANSISTORS(6A/1500V/50W) | Mospec Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |