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PDF CMKT2907AG Data sheet ( Hoja de datos )
| Número de pieza | CMKT2907AG | |
| Descripción | SURFACE MOUNT DUAL PNP SILICON TRANSISTORS | |
| Fabricantes | Central Semiconductor | |
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CMKT2907A
CMKT2907AG
SURFACE MOUNT
DUAL PNP SILICON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMKT2907A and
CMKT2907AG each consist of two individual isolated
2907A PNP silicon transistors, manufactured by the
epitaxial planar process and epoxy molded in an
SOT-363 surface mount package. This ULTRAmini™
device has been designed for small signal general
purpose and switching applications.
SOT-363 CASE
• The CMKT2907AG is Halogen Free by design.
MARKING CODES:
CMKT2907A: K07
CMKT2907AG: K7G
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
ΘJA
60
60
5.0
600
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN MAX
ICBO
VCB=50V
10
ICBO
VCB=50V, TA=125°C
10
ICEV
VCE=30V, VBE=0.5V
50
BVCBO
IC=10µA
60
BVCEO
IC=10mA
60
BVEBO
IE=10µA
5.0
VCE(SAT)
IC=150mA, IB=15mA
0.4
VCE(SAT)
IC=500mA, IB=50mA
1.6
VBE(SAT)
IC=150mA, IB=15mA
1.3
VBE(SAT)
IC=500mA, IB=50mA
2.6
hFE VCE=10V, IC=0.1mA
75
hFE VCE=10V, IC=1.0mA
100
hFE VCE=10V, IC=10mA
100
hFE VCE=10V, IC=150mA
100
300
hFE VCE=10V, IC=500mA
50
UNITS
V
V
V
mA
mW
°C
°C/W
UNITS
nA
µA
nA
V
V
V
V
V
V
V
R4 (13-January 2010)
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet CMKT2907AG.PDF ] | |
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| CMKT2907A | SURFACE MOUNT DUAL PNP SILICON TRANSISTORS |  Central Semiconductor Corp |
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