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PDF SSG4N10E Data sheet ( Hoja de datos )
| Número de pieza | SSG4N10E | |
| Descripción | Dual-N Enhancement Mode Power MOSFET | |
| Fabricantes | SeCoS | |
| Logotipo |  |
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Elektronische Bauelemente
SSG4N10E
4A, 100V, RDS(ON) 120mΩ
Dual-N Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SSG4N10E provide the designer with the best
Combination of fast switching, ruggedized device design,
Ultra low on-resistance and cost-effectiveness.
FEATURES
Low on-resistance
Simple Drive Requirement
Double-N MosFET Package
SOP-8
LD
M
AC
JK
HG
B
FE
MARKING CODE
4N10ESS
= Date Code
PACKAGE INFORMATION
Package
MPQ
SOP-8
3K
Leader Size
13’ inch
Dimensions in millimeters
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.80 6.20
4.80 5.00
3.80 4.00
0° 8°
0.40 0.90
0.19 0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.35 0.49
0.375 REF.
45°
1.35 1.75
0.10 0.25
0.25 REF.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Symbol
VDS
Ratings
100
Gate-Source Voltage
VGS ±20
Continuous Drain Current@ VGS =10V 1
Pulsed Drain Current 2
Single Pulse Avalanche Energy 3
TA = 25°C
TA = 70°C
ID
IDM
EAS
4
3.1
15
9
Avalanche Current
Power Dissipation@ TA=25°C 4
IAS 6
PD 1.5
Operating Junction & Storage Temperature Range
TJ, TSTG
-55~150
Thermal Resistance Ratings
Thermal Resistance Junction-ambient (Max.) 1
Thermal Resistance Junction-Case (Max.) 1
RθJA
RθJC
85
50
Unit
V
V
A
A
mJ
A
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
21-May-2014 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4
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| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet SSG4N10E.PDF ] | |
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