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PDF SSF1321P Data sheet ( Hoja de datos )
| Número de pieza | SSF1321P | |
| Descripción | P-Channel MOSFET | |
| Fabricantes | SeCoS | |
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Elektronische Bauelemente
SSF1321P
-1.7A, -20V, RDS(on) 0.079Ω
P-Channel MOSFET
RoHS Compliant Product
A Suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low RDS(on)
and to ensure minimal power loss and heat dissipation.
Typical applications are DC-DC converters and power
management in portable and battery-powered products
such as computers, printers, PCMCIA cards, cellular
and cordless telephones.
FEATURES
Low RDS(on) provides higher efficiency and
extends battery life.
Low thermal impedance copper leadframe
SOT-323 saves board space.
Fast switching speed.
High performance trench technology.
SOT-323
A
L
3
Top View
CB
12
KE
3
1
2
D
F GH J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
1.80 2.20
1.80 2.45
1.1 1.4
0.80 1.10
1.20 1.40
0.15 0.40
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.1 REF.
0.525 REF.
0.08 0.25
0.8 TYP.
0.65 TYP.
PACKAGE INFORMATION
Package
MPQ
SOT-323
3K
Leader Size
7 inch
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current 1
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
VDS
VGS
ID @ TA=25°C
ID @ TA=70°C
IDM
IS
-20
±8
-1.7
-1.4
-2.5
±0.28
Power Dissipation 1
Operating Junction & Storage Temperature Range
PD@ TA=25°C
PD@ TA=70°C
TJ, TSTG
0.34
0.22
-55~150
Thermal Resistance Ratings
Maximum Thermal Resistance
Junction-Ambient 1
t ≦ 5 sec
Steady-State
Note:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
RθJA
375
430
Unit
V
V
A
A
A
W
°C
°C / W
http://www.SeCoSGmbH.com/
20-Nov-2013 Rev. C
Any changes of specification will not be informed individually.
Page 1 of 4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet SSF1321P.PDF ] | |
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