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Número de pieza | RU6051K | |
Descripción | N-Channel Advanced Power MOSFET | |
Fabricantes | Ruichips | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RU6051K (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! RU6051K
N-Channel Advanced Power MOSFET
Features
• 60V/50A,
RDS (ON) =10mΩ(Typ.)@VGS=10V
RDS (ON) =12mΩ(Typ.)@VGS=4.5V
• Super High Dense Cell Design
• Ultra Low On-Resistance
• 100% avalanche tested
• Lead Free and Green Devices Available (RoHS Compliant)
Applications
• DC-DC Converters and Off-line UPS
Pin Description
GDS
TO251
D
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
VGSS
TJ
TSTG
IS
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP①
300μs Pulse Drain Current Tested
ID② Continuous Drain Current(VGS=10V)
PD Maximum Power Dissipation
RJC Thermal Resistance-Junction to Case
RJA Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
EAS③
Avalanche Energy, Single Pulsed
Ruichips Semiconductor Co., Ltd
Rev. A– OCT., 2013
1
S
N-Channel MOSFET
Rating
Unit
TC=25°C
60
±20
175
-55 to 175
50
V
°C
°C
A
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
200 A
50
A
36
71
W
36
2.1 °C/W
100 °C/W
100 mJ
www.ruichips.com
1 page RU6051K
Typical Characteristics
Output Characteristics
100
Vgs=8,910V
80
60
5V
40
20 3V
0
01234
VDS - Drain-Source Voltage (V)
5
Drain-Source On Resistance
2.5
VGS=10V
IDS=50A
2.0
1.5
1.0
0.5
0.0
-50
TJ=25°C
Rds(on)=10mΩ
-25 0 25 50 75 100 125
TJ - Junction Temperature (°C)
150
Capacitance
2400
2100
Frequency=1.0MHz
1800
1500
Ciss
1200
900
600
300
Crss
0
Coss
1 10
VDS - Drain-Source Voltage (V)
100
Ruichips Semiconductor Co., Ltd
Rev. A– OCT., 2013
5
25
20
15
10
5
0
0
Drain-Source On Resistance
4.5V
10V
20 40 60 80
ID - Drain Current (A)
100
Source-Drain Diode Forward
10 TJ=150°C
1
0.1
TJ=25°C
0.01
0.2
0.4 0.6 0.8 1 1.2
VSD - Source-Drain Voltage (V)
1.4
Gate Charge
10
9 VDS=48V
IDS=50A
8
7
6
5
4
3
2
1
0
0 10 20
QG - Gate Charge (nC)
30
www.ruichips.com
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet RU6051K.PDF ] |
Número de pieza | Descripción | Fabricantes |
RU6051K | N-Channel Advanced Power MOSFET | Ruichips |
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