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PDF 2SK3427 Data sheet ( Hoja de datos )
| Número de pieza | 2SK3427 | |
| Descripción | Silicon Junction FETs | |
| Fabricantes | Panasonic | |
| Logotipo |  |
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Silicon Junction FETs (Small Signal)
2SK3427
Silicon N-Channel Junction
For impedance conversion in low frequency
For electret capacitor microphone
I Features
• High mutual conductance gm
• Low noise voltage of NV
0.40
+0.10
–0.05
3
12
Unit: mm
0.12
+0.02
–0.01
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Drain-source voltage
Drain-gate voltage
Drain-source current
Drain-gate current
Gate-source current
Allowable power dissipation
Operating ambient temperature
Storage temperature
VDSO
VDGO
IDSO
IDGO
IGSO
PD
Topr
Tstg
20
20
2
2
2
200
−20 to +80
−55 to +150
Unit
V
V
mA
mA
mA
mW
°C
°C
(0.95) (0.95)
1.9±0.1
2.9±0.2
10˚
(0.5)
Marking Symbol: 5E
1: Drain
2: Source
3: Gate
MiniT3-F1 Package
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ
Drain current
Mutual conductance
Noise voltage
Voltage gain
Voltage gain difference
ID VDS = 2.0 V, RD = 2.2 kΩ ± 1%
100
IDSS VDS = 2.0 V, RD = 2.2 kΩ ± 1%, VGS = 0 107
gm VD = 2.0 V, VGS = 0, f = 1 kHz
660 1 600
NV VD = 2.0 V, RD = 2.2 kΩ ± 1%
CO = 5 pF, A-Curve
GV1 VD = 2.0 V, RD = 2.2 kΩ ± 1%
−7.5 −4.7
CO = 5 pF, eG = 10 mV, f = 1 kHz
GV2 VD = 12 V, RD = 2.2 kΩ ± 1%
−4.0 −1.5
CO = 5 pF, eG = 10 mV, f = 1 kHz
GV3 VD = 1.5 V, RD = 2.2 kΩ ± 1%
−8.0 −5.0
CO = 5 pF, eG = 10 mV, f = 1 kHz
∆GV. f*
VD = 2.0 V, RD = 2.2 kΩ ± 1%
CO = 5 pF, eG = 10 mV, f = 1 kHz to 70 Hz
0
GV2 − GV1
0
GV1 − GV3
0
Note) *: ∆GV. f is assured for AQL 0.065%. (the measurement method is used by source-grounded circuit.)
Max
460
470
10
1.7
4.0
1.7
Unit
µA
µS
µV
dB
dB
Publication date: April 2002
SJF00034AED
1
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SK3427.PDF ] | |
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