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Número de pieza | IRFH3707PBF-1 | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | International Rectifier | |
Logotipo | ||
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No Preview Available ! IRFH3707PbF-1
VDS
RDS(on) max
(@VGS = 10V)
Qg (typical)
ID
(@TA = 25°C)
30
12.4
5.4
12
V
mΩ
nC
A
Applications
l Synchronous Buck Converter for Computer Processor Power
l Isolated DC to DC Converters for Network and Telecom
l Buck Converters for Set-Top Boxes
l System/load switch
Features
Industry-standard pinout PQFN 3mm x 3mm Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
⇒
HEXFET® Power MOSFET
S
DS
DS
G
D
D
3mm x 3mm PQFN
Benefits
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number
IRFH3707PbF-1
Package Type
PQFN 3mm x 3mm
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part
Number
IRFH3707TRPbF-1
Absolute Maximum Ratings
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @TA = 70°C
TJ
TSTG
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
gPower Dissipation
gPower Dissipation
gLinear Derating Factor
Operating Junction and
Storage Temperature Range
Max.
30
± 20
12
9.4
29
18
96
2.8
1.8
0.02
-55 to + 150
Units
V
A
W
W/°C
°C
Thermal Resistance
Parameter
fRθJC
Junction-to-Case
ghRθJA Junction-to-Ambient
hRθJA Junction-to-Ambient (t<10s)
Notes through are on page 10
Typ.
–––
–––
–––
Max.
7.5
45
31
Units
°C/W
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June 6, 2014
1 page IRFH3707PbF-1
12
10
8
6
4
2
0
25
50 75 100 125
TA , Ambient Temperature (°C)
150
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
2.5
2.0
ID = 25μA
1.5
1.0
0.5
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 10. Threshold Voltage Vs. Temperature
100
D = 0.50
10 0.20
0.10
0.05
1 0.02
0.01
0.1
0.01
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + TA
1E-005 0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
10 100 1000
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
June 6, 2014
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet IRFH3707PBF-1.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRFH3707PBF-1 | Power MOSFET ( Transistor ) | International Rectifier |
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