(PDF) MS23N18 Datasheet - N-Channel 30-V (D-S) MOSFET

Número de pieza	MS23N18
Descripción	N-Channel 30-V (D-S) MOSFET
Fabricantes	Bruckewell
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No Preview Available ! MS23N18 N-Channel 30-V (D-S) MOSFET Description These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are lower voltage application, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed • RoHS compliant package Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits Packing & Order Information 3,000/Reel Graphic symbol Publication Order Number: [MS23N18] © Bruckewell Technology Corporation Rev. A -2014 1 page MS23N18 N-Channel 30-V (D-S) MOSFET ■Typical Electrical Characteristics FIG.7-GAGE CHARGE FIG.8-NORMALIZED ON-RESISTANCE VS JUNCTION TMPERATURE FIG.9-SAFE OPERATING AREA FIG.10-SINGLE PULSE MAXIMUM POWER DISSIPATION FIG.11-NORMALIZED THERMAL TRANSIENT JUNCTION TO AMBIENT Publication Order Number: [MS23N18] © Bruckewell Technology Corporation Rev. A -2014 5 Page

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PDF MS23N18 Data sheet ( Hoja de datos )